Abstract:Metal oxides, in many cases, exhibit n-type semiconductors due to the existence of oxygen vacancies in the lattice. Therefore, the interactions of oxygen being in medium with oxygen vacancies during the annealing process can change concentrations of defects that will cause variations in optical and electric properties of such materials. However, research on such interactions for commercial FTO, ITO, and TiO 2 products has been limited. This paper summarizes the results of some experiments conducted to determin… Show more
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