Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

“…Contrarily, the resistivity increased as the substrate temperature more than 100 • C that attributed to the formation of oxygen vacancies were suppressed due to the oxygen atoms were prone to react with zinc atoms [8,19]. In addition, the electron mobility and average transmittance in visible range of ZITO film decreased when the substrate temperature increased which associated with the growth of grains [17,20,21].…”

Effect of substrate temperature on structural, morphological and optical properties of deposited Al/ZnO films

“…The zinc oxide with a wide band gap (3.37 eV) n-type semiconductor and high exciton binding energy (60 meV) at room temperature is actively studied as a material that could replace ITO, because ZnO is a widespread, inexpensive and non-toxic material. Impurity doping of ZnO with the elements of the third group of the periodic table (boron, aluminium, gallium and indium) produces n-type conductivity due to Zn ?2 ion substitution [6][7][8][9][10]. The most perspective materials for ZnO doping are Al (Al/ZnO) [9] and Ga (Ga/ZnO) [10] because of the high solubility and behaviour during the growth, which allows obtaining the films of low resistivity (*10 -4 Ohm 9 cm) and high transparency in the visible region of the spectrum [11][12][13][14].…”

Growth and characterization of high transmittance GZO films prepared by sol-gel method

“…Y.H. Kim et al [27] reported the high optical band gap energies in AZO films which were thought to be…”