A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Chen, K.J.; Hung, Fei-Yi; Chang, Shoou‐Jinn; Chang, Sheng; Mai, Yu-Chun; Hu, Zheng

doi:10.1016/j.jallcom.2010.12.155

Cited by 12 publications

(9 citation statements)

References 40 publications

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“…The ZITO film was approximately 145 nm-thick, and its formation was continuous and uniform. The select area electron diffraction (SAED) pattern (inset of Figure 5(a)) confirmed that the unbiased ZITO film was an amorphous structure, which is in agreement with previous research [14]. The oxygen, indium, zinc, and tin concentrations from points A to B (180 nm) were examined by EDS ( Figure 5(b)).…”

Section: Methodssupporting

confidence: 88%

“…The experiments in this study involved fabricating the biascrystallization system (BCS) using metal indium as the current-transmitting layer. An indium layer of 200 nm and a ZnInSnO (ZITO) film of 150 nm were sequentially deposited onto a glass substrate by a DC magnetron sputter deposition (Helix/HLLS-87) and a cosputtering system (VAC/Model ACS-4000-C3), respectively [14]. A DC power supply (KIKUSUI, PAK60-6A) provided the electrical current.…”

Section: Methodsmentioning

confidence: 99%

“…XRD analysis was performed to determine the influence of indium atoms diffusion on structural characteristics (inset of Figure 4). The present ZITO crystallization was attributed to an amorphous-like structure [14]. However, the as-grown ZITO/In sample exhibited a polycrystalline structure, and the In 2 O 3 phase dominated the ZITO crystallization [16].…”

Section: Methodsmentioning

confidence: 99%

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The Low‐Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias‐Crystallization Mechanism

Chen

Hung

Lui

et al. 2012

Journal of Nanomaterials

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This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from3.08×10−4 Ω∗cm to6.3×10−5 Ω∗cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately170∘C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.

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Section: Methodssupporting

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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The Low‐Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias‐Crystallization Mechanism

Chen

Hung

Lui

et al. 2012

Journal of Nanomaterials

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“…Due to micro SnO x phases combined with In 2 O 3 phases easily, some tin ions had diffused from interface region into ZITO matrix. 21,24) Briefly, the variation of elements in the surface and interface region was attributed to diffusion of atoms of BCM. These mechanisms mainly caused the indium atoms to diffuse into ZITO film (Fig.…”

Section: Resultsmentioning

confidence: 99%

The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

et al. 2011

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The Zn-In-Sn-O (ZITO) transparent conductive oxide (TCO) films were deposited onto indium/glass substrate by co-sputtering system. The bias-crystallization mechanism (BCM) was used to promote the quality of ZITO films. After biasing treatment (biased at 4 V for 20 min), the resistivity of ZITO film reduced from 3:08 Â 10 À4 Ãcm to 6:3 Â 10 À5 Ãcm. This reduction was attributed to the indium ions diffused into ZITO film using BCM. According to the Joule's law and Ohm's law, the required energy of biasing treatment was only 480 Joule. Comparing with traditional annealed treatment (annealing at 500 C for 20 min in vacuum required 9:8 Â 10 6 Joule), BCM had improved the conductivity of ZITO film in a short time at room temperature and possessed an excellent competitiveness of cost.

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“…The authors described that the electrical, optical and structural properties were clearly dependent on the Ag film thickness. Several reports have studied on other multi-compound TCO films [13][14][15]. The metals for a practical use in composite films are Al, Cu and Ag.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and opto-electric properties of Cu/ITO thin films

Wang

Shi

et al. 2012

Journal of Alloys and Compounds

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A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

Cited by 12 publications

References 40 publications

The Low‐Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias‐Crystallization Mechanism

The Low‐Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias‐Crystallization Mechanism

The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

Microstructure and opto-electric properties of Cu/ITO thin films

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