Growth and characterization of high transmittance GZO films prepared by sol-gel method

Ga-Doped ZnO Nanostructured Powder for Cool-Nanopigment in Environment Applications

“…Similar results were reported for Ga:ZnO nanoparticle samples prepared by a polymer pyrolysis method with Ga contents that are closer to those reported here c.f. [ 19 , 28 ].…”

“…Therefore, Ga:ZnO is considered one of the most important ZnO-based materials because it acts as a donor that could enhance the electrical properties of ZnO by increasing the free electron density, and/or carrier concentrations, [ 14 , 15 ]. Furthermore, the Ga ionic radius (0.62 Å) is smaller than that of Zn (0.74) and the shorter length of the covalent band length of Ga–O (1.92 Å) compare to that of Zn–O (1.97 Å) makes it simple for Ga 3+ ion to substitute for Zn 2+ ion with less lattice distortions and much increasing in the solubility of Ga ions into ZnO matrix [ 16 , 17 , 18 , 19 ].…”

“…Various preparation techniques have been employed for Ga:ZnO synthesization in powders as well as in film forms are such as sol–gel processing [ 19 , 20 , 21 ], pulsed laser deposition [ 22 ], magnetron sputtering [ 23 ], chemical spray pyrolysis [ 24 , 25 ], RF co-sputtering [ 26 , 27 ], polymer pyrolysis method [ 28 ] and many other methods. One of these methods and techniques which has lots of advantages compared to other synthetic chemical techniques is the polymer pyrolysis method.…”

Ga-doped ZnO self-assembled nanostructures obtained by microwave-assisted hydrothermal synthesis: Effect on morphology and optical properties

“…Under thermodynamic equilibrium conditions, the growth along the c-axis is favour respect to the growth in the prismatic directions to reduce the surface energy and, hence, the facet with higher surface energy will result smaller in area than the lower energy facets [1]. Consequently, large arrays of ZnO nanostructures can be grown relatively easy along the c-axis [28][29][30][31]. However, as mentioned, the experimental conditions of the fabrication procedure can also play a decisive role on the crystal development.…”

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

“…34 Estimation of WF from a MOSFET device is a comparatively cheaper alternative and is a simple process. GZO thin films are synthesized by a variety of deposition techniques such as spray pyrolysis, 35 magnetron sputtering, 36 sol-gel deposition, 37 pulsed laser deposition, [38][39][40] ion plating, 41 metal-organic chemical vapor deposition 42,43 and atomic layer deposition. 44,45 In this report, we demonstrate a unique method of estimating the WF of RF sputtered GZO thin film from a MOSFET device.…”