Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Abstract

Work function (WF) of radio-frequency (RF) sputtered Gallium-Doped Zinc Oxide (GZO) thin films has been estimated using the electrical characteristics of an n-metal oxide semiconductor field-effect transistor (n-MOSFET) device. Two identical sets of MOSFETs were fabricated in this work using a four-level mask. These MOSFETs have two different types of gate contact materials (Al and GZO, respectively). GZO was deposited by using RF magnetron sputtering technique while Al was deposited using thermal evaporation technique. By comparison of the work function of the two MOSFETs, the work function of RF sputtered GZO thin films was identified to be around 4.58 eV.

Material and Antibacterial Properties of Spinel-Structure Ca-Doped ZnCo2O4 Thin Films

“…Materials such as zinc oxide and indium tin oxide are currently widely used in thin-film electrodes, solar cells, and displays. [1][2][3] Thus, the development of new applicable semiconductor oxides is an important area of research. The ZnCo 2 O 4 spinel structure has optical, electrical, magnetic, and photocatalytic properties that meet the needs of material development.…”