Effects of plasma conditions on properties of ZnO films grown by plasma-assisted molecular beam epitaxy

Abstract

Articles you may be interested inInvestigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecularbeam epitaxy J. Appl. Phys. 108, 093518 (2010); 10.1063/1.3498800Effects of two-step growth by employing Zn-rich and O-rich growth conditions on properties of ( 11 2 ¯ 0 ) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy J. Appl. Phys. 98, 073502 (2005); 10.1063/1.2064308Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxyThe influence of rf power and aperture plate configuration on the growth of ZnO thin films using plasma-assisted molecular beam epitaxy was investigated. It was found that by changing the aperture plate geometry from 276 to 25 holes, an increase of growth rate was observed, suggesting that the latter is more efficient for ZnO growth. The structural, electrical, and optical properties were also improved as measured by in situ electron diffraction, single field Hall effect, and photoluminescence. A background carrier concentration of 1 ϫ 10 18 cm −3 and a mobility of 52 cm 2 / V s were measured, and a room-temperature band edge peak 200 times the defect band intensity was observed. Optical emission spectroscopy shows significantly different behavior in plasma generated using the two plates and suggests that more than increased atomic oxygen production is occurring.

Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

“…Both a linear and a non‐linear increase of different peak intensities was observed with respect to the RF‐power. These observations for our employed O‐plasma quartz bulb equipped with 254 holes are similar to previous reported observations using a 275‐hole aperture with an RF power between 150 and 450 W with sccm ().…”

Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy

“…Previous investigations considered the effect of oxygen plasma factors in ZnO, but a thorough study of the impact of oxygen plasma conditions in c-ZnMgO has not been reported [18,19]. Here we investigate the effect of oxygen flow rate and applied RF power on the growth rate and surface morphology of c-ZnMgO thin films grown on MgO substrates.…”

Fabrication and Characterization of Cobalt Sensitized Nanostructure Zinc Oxide Thin Film Coated on Glass by Sol-Gel Spin Coating Using Trans-bis(acetylacetonato)-bis(4-methylpyridine)cobalt(III)

“…The annealing temperature has a great effect on the quality of zinc film and high quality zinc oxide film could be obtained at high substrate temperature. [23][24][25][26][27][28][29] Zinc oxide nanostructures with different morphologies have been fabricated. [30][31][32][33][34][35][36][37][38] Application of cobalt complexes in nanotechnology has been extensively studied due to their greater functional properties in chemical sensors, catalysis, and biosensors.…”