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Amorphous Zn1−xMgxO (α-Zn1−xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the α-Zn1−xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1−xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content.

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Cubic Zn1−xMgxO thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate and applied Radio-Frequency (RF) plasma power were varied to investigate the impact on film growth and optoelectronic device performance. Solar-blind and visible-blind detectors were fabricated with metal-semiconductor-metal interdigitated Ni/Mg/Au contacts and responsivity is compared under different growth conditions. Increasing oxygen flow rate and RF plasma power increased Zn incorporation in the film, which leads to phase segregation at relatively high Zn/Mg ratio. Responsivity as high as 61 A/W was measured in phase-segregated ZnMgO visible-blind detectors.