Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy

Boutwell, R. Casey; Wei, Ming; Baudelet, Matthieu; Schoenfeld, Winston V.

doi:10.1016/j.jallcom.2013.09.064

Cited by 9 publications

(6 citation statements)

References 24 publications

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“…Under a low oxygen partial pressure condition of 1 × 10 −5 mbar, the surface is flat with a root mean square (RMS) value of 0.75 nm [Fig. 2 20 which significantly enhances the diffusion and promotes step flow growth; this finding is consistent with the simulated results. The growth breaks the kinetic limit and becomes selective, thereby forming a nonuniform surface with facets.…”

Section: (B)] O-rich Conditionssupporting

confidence: 84%

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

et al. 2016

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Oxygen-polar ZnO films are grown in step flow mode by molecular beam epitaxy. Driven by the step flow anisotropy, the growth leads to the occurrence of specific hexagonal pits in the surface. The specific pits are formed by interlacing steps of the {10̄1̄4} facets, thus quenching the macroscopic dipole moment along the c-axis and satisfying the stabilization principles. Nitrogen (N) doping trials are then performed on the basis of the stable surface. In doping, growth remains in step flow mode but the step flow anisotropy vanishes, resulting in an obvious change of the surface morphology. Besides, a distinct acceptor state appears by in situ scanning tunneling spectroscopy analysis. First-principles calculations reveal that N readily substitutes for step-edge Zn and acts as NO2 adsorbed at the step edge. Desorption of the NO2 facilitates the formation of NO-VZn shallow acceptor complexes, which contributes to the appearance of the acceptor state. According to the peculiarities of N dopants on the O-polar surface, vicinal O-polar substrates (e.g., {10̄1̄4} substrate) are promising in ZnO : N due to the easily achieved step flow growth and high density of step edges for N incorporation.

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Section: (B)] O-rich Conditionssupporting

confidence: 84%

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

et al. 2016

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“…The O‐plasma was investigated during similar conditions as for the grown samples by optical emission spectroscopy, to determine the amount of active O (). For this purpose, a fiber‐coupled Avantes AvaSpec 3648 spectrometer with a 200–1100 nm wavelength range was connected to the quartz view‐port located at the end of the plasma source.…”

Section: Methodsmentioning

confidence: 99%

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Adolph

Ive

2016

Phys. Status Solidi B

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We studied the effects of a varying O2 flow rate on the growth of ZnO(0001) and ZnO(000true1‾) layers on normalGaN/italicAl2O3 templates by plasma‐assisted molecular beam epitaxy. The O2 flow rate through the O‐plasma source was varied between 0.25 and 4.5 standard cubic centimeters per minute (sccm) corresponding to a growth chamber pressure between 3.0×10−6 and 5.0×10−5 Torr. We found that the change of the O2 flow rate had a profound effect on the ZnO layer growth rate. A maximum growth rate was reached for an O2 flow rate of 1.0–2.0 sccm. The same growth rate dependence on the O2 flow rate was observed for ZnO(0001) layers that were grown on GaN/4H‐SiC buffer layers for verification. To assess the amount of active O contributing to the ZnO‐growth, the spectral composition of the plasma was investigated with optical emission spectroscopy. The integrated optical emission line intensity reached a maximum for an O2 flow rate between 1.0 and 2.0 sccm. Essentially all emission lines exhibited a maximum intensity for an O2 flow rate between 1.0 and 2.0 sccm thus coinciding with the flow rate yielding the maximum growth rate.

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“…Active particles in the oxygen plasma were identified by optical emission spectroscopy in the work of Boutwell et al 44 It was determined that under the experimental conditions, more than 70% of atomic oxygen is in the neutral state. In addition, the molecular emission intensity decreased with increasing plasma source power and oxygen flow rate.…”

Section: Oxygen Adsorptionmentioning

confidence: 99%

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

PonomarevOleg

LvovaNatalia

RyazanovaAnna

2017

Surface Innovations

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This paper presents the results of quantum-chemical calculations of the adsorption and desorption activation energy bonding energy and the results of the interactions between particles (hydrogen (H), oxygen (O), methylene (CH 2 ) and carbon monoxide (CO)) with point defects on a reconstructed hydrogenated diamond surface C(100)-(2×1): a monovacancy, a divacancy and an adatom. The paper describes the most probable single acts of etching and restoration of an ordered surface. It is shown that the most likely single etching acts among the considered processes are the formation of carbon monoxide molecules from adatoms and oxygen from the gas phase. The most effective process of restoring an ordered surface is the attachment of methylene molecules to divacancy defects. It is assumed that some 'empty' dimer rows are formed as a result of surface vacancy defect etching. The results can be used to analyze the physical and chemical processes on the diamond surface during reactive ion etching using hydrogen-/oxygen-based plasma. NotationE act adsorption activation energy E b bond energy (heat of adsorption) E cl energy of the diamond cluster E des desorption activation energy E p energy of an isolated particle E saddle saddle point of the reaction coordinate E sys energy of the diamond cluster with adsorbed particle DE change in the total energy of the surface + particle system

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Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy

Cited by 9 publications

References 24 publications

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

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Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by Molecular Beam Epitaxy

Cited by 9 publications

References 24 publications

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO

Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

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Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy