Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

Dupont, Laurent; Khatir, Zoubir; Lefebvre, Stéphane; Bontemps, Serge

doi:10.1016/j.microrel.2006.07.057

Cited by 106 publications

(39 citation statements)

References 4 publications

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“…Dimples effectively reduce the stress at the corners, where the stress is concentrated, and greatly increase the stability of the DBC substrate relative to thermal shock [42]. A recently published report on AlN DBC substrates bonded to AlSiC also confirms this thickness effect; however, it is unclear from this data which solder was used to mount the DBC to the AlSiC base-plate, and what role if any this may play in the reliability of the overall structure [43]. It is also interesting to note that the overall bond strength of the DBC substrate may be impacted by the soldering process used to bond the die to the substrate or the substrate to a base-plate.…”

Section: Substrate Materialsmentioning

confidence: 72%

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

Barlow¹,

Elshabini²

2006

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Section: Substrate Materialsmentioning

confidence: 72%

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

Barlow¹,

Elshabini²

2006

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“…Both the Al 2 O 3 and AlN substrates show, not unsurprisingly, excellent thermal performance, but both are expensive and have shown high temperature reliability issues e.g. when exposed to thermal cycling [18]. Si 3 N 4 has shown tremendous high temperature performance [19] which makes it a hot candidate for high performance, reliability and high temperature applications.…”

Section: Methodsmentioning

confidence: 99%

Interconnects and substrates for thermal considerations

Larsson

Vardoy

Oldervoll

et al. 2012

13th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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Novel and emerging packaging technologies expand the designer's toolbox. Metal coated polymer spheres (MPS) for ball grid array (BGA) assembly is a promising interconnect technology improving reliability, while high thermal conductivity substrates, e.g. AlSiC and AlN, is interesting for enhanced thermal performance. But new tools bring along new challenges in the design phase of innovative packaging solutions. Knowledge of how these tools influence the system characteristics is therefore key; e.g. electrical, mechanical and thermal performance.This study reports on the thermal performance of several novel and more traditional interconnect and substrate technologies. It comprises a relative thermal impact study of individual technologies. The system consists of a power dissipating silicon die assembled onto different substrates with varying interconnect technologies. The study was performed with finite element analysis (FEA) assisted with a compact model and is scheduled for comparison with identical fabricated systems.The results show that it is possible to utilize FEA efficiently on a system scale during the design process with sufficient accuracy. It also reveals that the combination of interconnect and substrate technology should be chosen with care, especially regarding the system's thermal performance, disclosing potential reliability issues and illustrating costbenefit tradeoffs. KEY WORDS: Thermal management, metal coated polymer spheres, anisotropic conductive film, ceramic and metal matrix substrates, FEA, simulation NOMENCLATURE cross-sectional area, m 2 heat transfer coefficient, W/m 2 ·K total radiosity, W/m 2 thermal conductivity, W/m·K characteristic length, m heat transfer rate, W ′′ heat flux, W/m 2 resistance, K/W thickness, m temperature, K width/length, m impedance, K·cm 2 /W Greek symbols emissivity ∆ difference gradient Stefan-Boltzmann constant, W/m 2 ·K 4

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“…In high temperature operating SiC devices, several technologies, such as Al 2 O 3 direct-copperbond (DCB) and AlN DCB are limited in wide temperature cycling (Dupont, 2006a), as the ceramic is fractured by the mechanical stress that is imposed by the copper foil (see Figure 14a). The local mechanical stress is incremented by each cycling due to the work hardening of the copper foil, increasing its yield strength (see Figure 14b), this goes on until the maximum acceptable stress is attained at the ceramic, causing its failure (Dupont, 2006b). For intermediate current levels, it is possible to diminish the metallization thickness to delay failure, or to make dimples applied to the edges of the copper foil (Dupont, 2006a).…”

Section: Thermal Cyclingmentioning

confidence: 99%