Effects of ion damage on the surface of ITO films during plasma treatment

Shin, Hyunjung; Kim, Chanhyung; Bae, Changdeuck; Lee, Jang‐Sik; Lee, Jaegab; Kim, Sunghan

doi:10.1016/j.apsusc.2007.05.029

Cited by 16 publications

(8 citation statements)

References 13 publications

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“…However, recent c-AFM studies of the bare ITO electrode have revealed large spatial variations of the conductance of the ITO surface. [31][32][33] This raises the possibility that some of the variation observed in the PEDOT:PSS current images could be due to heterogeneity in the underlying ITO contact. To exclude this possibility, we imaged PEDOT:PSS films on flat gold substrates.…”

Section: Resultsmentioning

confidence: 99%

“…The nonuniform current images in Figure , panels c and d, are consistent with the expected morphology of PEDOT:PSS films, as well as with previous STM ,, studies on these films. However, recent c-AFM studies of the bare ITO electrode have revealed large spatial variations of the conductance of the ITO surface. – This raises the possibility that some of the variation observed in the PEDOT:PSS current images could be due to heterogeneity in the underlying ITO contact. To exclude this possibility, we imaged PEDOT:PSS films on flat gold substrates.…”

Section: Resultsmentioning

confidence: 99%

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The Changing Face of PEDOT:PSS Films: Substrate, Bias, and Processing Effects on Vertical Charge Transport

2008

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Poly (3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) is widely used as a semitransparent anode layer in organic light-emitting diodes and polymer photovoltaics. We use conductive atomic force microscopy (c-AFM) to map the electronic properties of PEDOT:PSS films during a variety of processing steps to better explain how the observed changes in macroscopic electronic properties arise from local changes in charge transport. We observe only small conductive regions, ∼20 nm in size, surrounded by more insulating regions in all of the films studied. We confirm that these features dominate the c-AFM measurements, independent of the substrate. We observe a marked increase in the density of the conductive regions with increasing annealing times, increasing applied bias (independent of polarity), and decreasing PSS concentration (achieved by altering PEDOT:PSS grades). We also find an increase in current flow following a chlorobenzene wash, suggesting the solvents used in processing the active semiconductor layers on top of PEDOT:PSS anodes may affect the quality of the interface and subsequently alter device performance.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Changing Face of PEDOT:PSS Films: Substrate, Bias, and Processing Effects on Vertical Charge Transport

2008

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“…We previously reported the effects of the bias power on the work function and Schottky-like conduction [22], when applied to a substrate. In this study, we fabricated OLEDs to investigate the effects of the bias power on the performance of the devices, including their current density, luminescence, and current efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…As a result, in order to determine the process window for plasma processing, it is necessary to examine the effects of the experimental variables including bias power on the device performance [22].…”

Section: Introductionmentioning

confidence: 99%

Effects of substrate bias power on the surface of ITO electrodes during O2/CF4 plasma treatment and the resulting performance of organic light-emitting diodes

et al. 2010

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During surface treatment using O2/CF4 plasma chemistry, the bias power applied to the indium-tin-oxide(ITO) substrate significantly degrades the electrical and optical performance of the organic light emitting diode (OLED) formed on the ITO electrode as a result of the formation of CFx polymer, In-Sn-F compounds, and structural defects. Application of bias power to the substrate effectively increases the sheath potential over the substrate and thus the flux of CFx + ion created in the O2/CF4 plasma, which leads to the production of CFx polymers as well as structural defects.

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“…The higher binding energy (O H ) peak centered at 530.83 eV is associated with a lower coordination number of the oxygen atom with metals due to the existence of defects. [30][31][32] After the SCF experiment, the elements are at a molar proportion of 38.8%, 3.9% and 57.3%. The XPS results show an increase in total oxygen atom molar proportion and an increase in O H percentage, which are associated with oxygen doping and defect generation during the SCF treatment, respectively.…”

mentioning

confidence: 99%

Use of a supercritical fluid treatment to improve switching region in resistive random access memory

Lin

Chen

Chang

et al. 2022

Appl. Phys. Express

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This work investigates the influence of a supercritical fluid (SCF) treatment on the characteristics of resistive random access memory (RRAM). A comparison between the experimental results for the device at initial, after the overset process, and after the SCF treatment, shows that the treatment dopes oxygen ions and generates defects in the switching region (SR). Moreover, the changes in the ratio of the components of the SR after the SCF treatment improve memory characteristics, including a lower set/reset voltage (VSET/VRESET), and higher resistances at low resistance state (LRS) and high resistance state (HRS).

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Effects of ion damage on the surface of ITO films during plasma treatment

Cited by 16 publications

References 13 publications

The Changing Face of PEDOT:PSS Films: Substrate, Bias, and Processing Effects on Vertical Charge Transport

The Changing Face of PEDOT:PSS Films: Substrate, Bias, and Processing Effects on Vertical Charge Transport

Effects of substrate bias power on the surface of ITO electrodes during O2/CF4 plasma treatment and the resulting performance of organic light-emitting diodes

Use of a supercritical fluid treatment to improve switching region in resistive random access memory

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