The effect of the Ni content (2-18 at.% Ni) in Al thin films on their resistivity, hillock formation and Al 3 Ni compound formation was investigated. The as-deposited Al-Ni-alloy films showed high elastic strains which increased with increasing Ni content. In addition, the annealing of the supersaturated Al-Ni-alloy thin films yielded two phases: Al 3 Ni and Al with strong (2 2 0) and (1 1 1) textures, respectively, suggesting that the nucleation of (2 2 0) Al 3 Ni is closely associated with (1 1 1) Al. The resistivity of the as-annealed Al-Ni-alloy films varied as functions of the volume fraction and grain size of the two phases, which were determined by the Ni content and annealing temperature, respectively. The hillock formation was effectively suppressed when a small amount of Ni was added to the Al alloy. The results showed that a Ni content of less than approximately 4.5 at.% produced hillock-free Al-alloy thin films with a low resistivity of less than 6.0 μ cm upon annealing at 350 • C.
During surface treatment using O2/CF4 plasma chemistry, the bias power applied to the indium-tin-oxide(ITO) substrate significantly degrades the electrical and optical performance of the organic light emitting diode (OLED) formed on the ITO electrode as a result of the formation of CFx polymer, In-Sn-F compounds, and structural defects. Application of bias power to the substrate effectively increases the sheath potential over the substrate and thus the flux of CFx + ion created in the O2/CF4 plasma, which leads to the production of CFx polymers as well as structural defects.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.