Use of a supercritical fluid treatment to improve switching region in resistive random access memory

Abstract

This work investigates the influence of a supercritical fluid (SCF) treatment on the characteristics of resistive random access memory (RRAM). A comparison between the experimental results for the device at initial, after the overset process, and after the SCF treatment, shows that the treatment dopes oxygen ions and generates defects in the switching region (SR). Moreover, the changes in the ratio of the components of the SR after the SCF treatment improve memory characteristics, including a lower set/reset voltage (VSET/VRESET), and higher resistances at low resistance state (LRS) and high resistance state (HRS).

Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment

“…Aiming at increasing the hole concentration in p-GaN and further forming good ohmic contacts at the metal/ GaN doped by Mg interface, some techniques related to the activation of Mg dopants have been reported, such as the activation of Mg dopants by low-energy electron beam irradiation (LEEBI), 9) thermal annealing, 10,11) microwave treatment 12) and laser annealing. 13) A low-temperature supercritical fluid (SCF) process is proposed to improve the dielectric quality of MOSFETs, [14][15][16] memory devices 17,18) and passivate the oxygen vacancy for thin film transistor 19,20) without introducing process damage. It is well known that the SCF state is a special phase of matter with liquid-like high solubility and gas-like high penetration ability, which can introduce specific elements into defective materials to passivate the broken bonds and improves device performance.…”