Effects of germanium and carbon coimplants on phosphorus diffusion in silicon

Abstract

The authors have studied the interactions between implant defects and phosphorus diffusion in crystalline silicon. Defect engineering enables ultrashallow n+∕p junction formation using phosphorus, carbon, and germanium coimplants, and spike anneal. Their experimental data suggest that the positioning of a preamorphized layer using germanium implants plays an important role in phosphorus diffusion. They find that extending the overlap of germanium preamorphization and carbon profiles results in greater reduction of phosphorus transient-enhanced diffusion by trapping more excess interstitials. This conclusion is consistent with the end-of-range defects calculated by Monte Carlo simulation and annealed carbon profiles.

Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation

“…Therefore, phosphorus did not exhibit evident diffusion. Such mechanism has been used to form ultrashallow phosphorus junctions with carbon implantation [17][18][19]. This also implies that interstitial generation did not significantly affect phosphorus deactivation, according to the deactivation behavior shown in Fig.…”

Overview of anneal technology for advanced logic CMOS

“…It is well known that co-implantation is essential to reduce B diffusion and obtain correct Short Channel Effect (SCE) control for advanced technology nodes and is now largely used [10][11]. Germanium (Ge) is often used for preamorphizing implant (PAI) and Fluorine (F) co-implant can also have a PAI effect.…”

Advanced Organic Molecular Doping Applied to Si: Influence of the Processing Conditions on the Electrical Properties

“…Common semiconductor doping methods are ion implantation (II), plasma immersion ion implantation (PIII), gas source‐based methods, and spin‐on dopant (SOD) methods. These various existing technologies are limited . II induces crystal damage during the implantation process and requires multiple steps to obtain conformal doping.…”