Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis

Abstract

Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm 2 V À1 s À1 for the undoped ZnO thin film, and the highest carrier concentration of 1:0 Â 10 19 cm À3 was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 C annealing, shallow level reduction and donors with a high activation energy of 129 AE 6 meV in the BZO thin films were characterized, and the shallow donors that dominate the carrier concentration for the as-deposited spray-pyrolized BZO thin film were eliminated.

Photocatalytic study of Zinc Oxide with bismuth doping prepared by spray pyrolysis

“…The unintentionally doped (u-) and bismuth (Bi) doped ZnO was deposited on n-Si substrate at 450 o C by spray pyrolysis (Huang et al 2014). With standard RCA cleaning process on Si substrate followed by rinse in buffer oxide etchant cleaning, the wafer was transfered to deposition chamber (Yu et al 2013). An aqueous solution with zinc acetate was used as a precursor.…”

Indium‐Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n‐(111) Si Substrate: The Effect of Film Thickness

“…The indium and nitrogen co-doped ZnO (INZO) thin film was deposited on n + (111) Si substrate at 475 ∘ C by spray pyrolysis [8]. Before deposition, the Si substrate was cleaned by standard cleaning process [25] followed by rinse in HF : H 2 O = 1 : 20 for 20 s to remove the oxide layer.…”

“…Lots of devices have been studied in many fields [1][2][3][4][5][6]. For unintentionally doped ZnO, it is usually an n-type semiconductor with carriers from the donor levels associated with oxygen vacancies and/or interstitial zinc atoms [7,8]. High quality n-type ZnO with Al, Ga, and In has been reported [9][10][11].…”