Abstract:The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at 450 o C with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration 6.13×10 16 cm-3 can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration 4.44×10 17 cm-3 can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminesc… Show more
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