(INVITED) Ultraviolet and visible luminescence from bismuth doped materials

Swart, H.C.; Kroon, R.E.

doi:10.1016/j.omx.2019.100025

Cited by 38 publications

(47 citation statements)

References 111 publications

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“…A similar NIR PL emission was recently reported for bismuth-based different host materials, such as glasses, oxides, crystals, thin films, zeolites, and others [ 22 , 23 , 35 , 36 , 37 , 38 , 39 , 40 , 41 ]. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs.…”

Section: Resultssupporting

confidence: 82%

“…This is dissimilar to one earlier report, where the NIR PL is obtained from SiNWs and ascribed to the phonon-assisted radiative recombination of electron–hole plasma as well as to the SiO x layer [ 7 ]. Different kinds of Bi centers, including Bi 0 , Bi + , Bi 2+ , Bi 3+ , and Bi clusters [ 22 , 37 , 38 , 39 , 40 , 41 ], may exist, resulting from when Bi melts during the evaporation process. However, based on earlier studies, only bismuth with low valence states (Bi 0 , Bi + ) or bismuth clusters originate the NIR emission, as they are the NIR-active Bi centers, regardless of the starting host material [ 36 , 37 , 38 , 39 , 40 , 41 ].…”

Section: Resultsmentioning

confidence: 99%

“…Out of the expensive metals, Bismuth (Bi) is an effective alternative that has not been explored yet for the decoration of SiNWs toward enhanced performance. Thanks to its interesting properties, such as being environment-friendly with a low toxicity, being a good absorber, behaving as a smart optically active center in diverse host materials, and having a relatively low melting point, Bi-based materials are used in various applications, ranging from telecommunication, biomedicine, and white LEDs to lasers [ 22 , 23 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

et al. 2020

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A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

et al. 2020

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“…Luminescence of various Bi 3+ -doped materials (alkali halides; alkaline-earth oxides, sulfates and phosphates; tungstates; garnets; perovskites; silicates; borates; vanadates; niobates, etc.) was systematically investigated starting from the 1960s (see, e.g., review papers [1][2][3][4][5][6][7][8][9][10][11] and references therein). Bi 3+ -doped complex oxides, where a trivalent Bi 3+ ion substitutes for a trivalent rare-earth ion, became the subject of special interest and extensive research due to their possible applications as scintillator and phosphor materials.…”

Section: Introductionmentioning

confidence: 99%

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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“…In addition to the EDS peaks of the Si, O, Al, La, F, Ba, K, Cr, and Yb atoms in SALBK glass, 35 the ones of copper were strongly obtained corresponding to the energy values about 0.95, 8.04, and 8.99 keV, 36 which means that the copper and potassium ions have been added into the glass network through the ion exchange process. 37 Table 1 The concentration ratio of salts mixture for the ion exchange process To investigate the inuence of the ion exchange process between copper and potassium on the structure of glass materials, we performed the XRD analysis of all the glass samples together with using X'Pert HighScore Plus soware, 38 showing the results in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Influences of copper–potassium ion exchange process on the optical bandgaps and spectroscopic properties of Cr³⁺/Yb³⁺ co-doped in lanthanum aluminosilicate glasses

Phan

et al. 2021

RSC Adv.

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(INVITED) Ultraviolet and visible luminescence from bismuth doped materials

Cited by 38 publications

References 111 publications

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Influences of copper–potassium ion exchange process on the optical bandgaps and spectroscopic properties of Cr³⁺/Yb³⁺ co-doped in lanthanum aluminosilicate glasses

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(INVITED) Ultraviolet and visible luminescence from bismuth doped materials

Cited by 38 publications

References 111 publications

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Influences of copper–potassium ion exchange process on the optical bandgaps and spectroscopic properties of Cr3+/Yb3+ co-doped in lanthanum aluminosilicate glasses

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Product

Resources

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Influences of copper–potassium ion exchange process on the optical bandgaps and spectroscopic properties of Cr³⁺/Yb³⁺ co-doped in lanthanum aluminosilicate glasses