Indium‐Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n‐(111) Si Substrate: The Effect of Film Thickness

Abstract

Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002) to (101) as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1and hole concentration around3×1019 cm−3can be achieved with film thickness less than 385 nm. The n-type conduction with concentration1×1020 cm−3is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

“…Ye et al summarized the electrical properties of several types of group III (B, Al, Ga, and In)-N co-doped p-type ZnO thin films and found that the hole concentration density, Hall mobility, and electrical resistivity were in the ranges of 3 × 10 16 to 5 × 10 18 cm −3 , 0.1 to 15 cm 2 /V• s, and 0.015 to 2 × 10 2 Ω•cm, respectively [7]. The main considerations of the acceptordonor co-doping method for achieving ptype conduction in ZnO thin films are to lower the ionization energy of acceptors and donors, enhance the solubility of acceptor dopants [38], and reduce the self-compensation effect to create shallower acceptor levels (falling within the range of 0.1-0.2 eV above the valence-band maximum (VBM)). Various electrical parameters, including the carrier type, carrier concentration, Hall mobility, and electrical resistivity, of the ZnO-based semiconductor thin films, measured by Hall-effect measurement, are presented in Table 2.…”

Influence of Carbon Modification on the Morphological, Structural, and Optical Properties of Zinc Oxide Nanoparticles Synthesized by Pneumatic Spray Pyrolysis Technique

“…Lately, efforts have been dedicated to the fabrication of modified ZnO nanocrystallites in order to enhance the structural, morphological, and optical properties of materials by modification of the surface properties, such as crystal deficiencies, electronic band gap, specific surface area, and O vacancies. Doping with nonmetallic elements such as carbon, nitrogen, and sulphur has also been considered to reduce the bandgap of ZnO semiconductors [8][9][10]. Specifically, carbon atoms have been usually employed as the dopant to change the morphological, structural, optical, and electronic properties of nano-ZnO because of the almost equivalent size with oxygen atoms.…”

Thickness Study of Er-Doped Magnesium Zinc Oxide Diode by Spray Pyrolysis

“…The emission was observed after the carrier recombination. The carrier spatial transport ability depends on the environmental temperature [38,39]. The inconsistency of the BE band for samples measured at 10 K and room temperature suggests the non-uniformed BE-related defect distribution in the samples.…”