Effects of Ce Doping on the Properties of ZnO Thin Films Prepared by DC Reactive Magnetron Sputtering

Abstract

The ZnO and ZnO:Ce thin films were prepared by DC reactive magnetron sputtering. The structure, surface morphology, optical and photoluminescence properties of ZnO:Ce thin films were investigated. The XRD results indicated that all the samples exhibited a hexagonal wurtzite structure. The surface morphology of the films was sensitive to the Ce concentration. All the films had a higher average transmittance (more than 85%) in the visible region and a strong absorption near the band-edge of ZnO. The photoluminescence properties of the Ce-doped ZnO thin films were also studied. Blue emissions were observed from the ZnO:Ce thin films. Our results indicated that the photoluminescence properties of ZnO thin films doped with low Ce concentration were related to the intrinsic transition of Ce3+ ions. However, when the Ce concentration increased, Zni also played an important role.