Impact of samarium on the structural and physical properties of sputtered ZnO thin films

Aida, M.S.; Abdel-wahab, M. Sh.; Hammad, Ahmed H.

doi:10.1016/j.ijleo.2021.168322

Cited by 10 publications

(2 citation statements)

References 70 publications

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“…Conversely, due to phenomena associated with the start and pulse suppression of the HiPIMS approach, mechanical properties of deposited films, such as hardness or optical qualities, can be improved [31]. In a recent report, Sm doped ZnO thin films were fabricated by RF sputtering on glass and silicon substrate [32]. AFM technique was utilized to measure the surface roughness and grain size distribution of the films.…”

Section: Sputteringmentioning

confidence: 99%

ZnO Thin Films: Fabrication Routes, and Applications

Pirposhte

2023

ZnO and Their Hybrid Nano-Structures

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Thin films have become a hot topic in the field of nanotechnology. Due to their optical and electrical characteristics, thin-film semiconductor oxides are among the semiconductor oxides with the greatest range of applications. The most popular semiconductor component is zinc oxide (ZnO). ZnO, a wide bandgap semiconductor (Eg = 3.37 eV at room temperature), have been widely used in electronic, optoelectronic, and information technology device platforms. Nano-ZnO thin films have a wide range of applications due to their remarkable properties. There are several methods for developing a thin layer of the ZnO nanomaterial. Sputtering, chemical vapor deposition (CVD), molecular beam epitaxy, pulsed laser deposition (PLD), and spray pyrolysis are among these methods. Although sputtering is the most commonly used method for high-quality applications, chemical vapor deposition and spray pyrolysis are also popular due to their low cost and ease of use. This chapter provides a brief overview of the various fabrication routes, characterization techniques, and applications of ZnO thin films, allowing us to investigate the chemical, structural, optical, and electrical properties of ZnO thin films, as well as their various applications.

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Section: Sputteringmentioning

confidence: 99%

ZnO Thin Films: Fabrication Routes, and Applications

Pirposhte

2023

ZnO and Their Hybrid Nano-Structures

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“…Optical Spectroscopic analysis revealed that incorporation of Pr led to an enhancement in film transparency and an intriguing shift in the non-linear absorption behavior was identified; as the concentration of Pr doping increased, the transition shifted from saturable absorption to reverse saturable absorption. M S Aida et al [14] conducted a study exploring the influence of Samarium (Sm) on both the structural and physical characteristics of sputtered ZnO thin films. The investigations led to a comprehensive analysis of linear and non-linear optical parameters, as well as photoluminescence, with a focus on their correlation with the Sm content.…”

Section: Introductionmentioning

confidence: 99%

Exploration of the optical characteristics in sol-gel synthesized europium-doped zinc oxide thin films for potential optoelectronic use: a comprehensive characterization approach

Tahir,

Bujran,

Want

2024

Phys. Scr.

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In this study, we present our findings on the spin coating deposition of Zinc-Oxide (ZnO) nanowire arrays and Europium doped ZnO (Eu3+: ZnO) nanostructure thin films. These arrays were grown on soda lime (silica) coated glass substrate. We conducted a comprehensive analysis of the structural and optical properties of the as-synthesized nanostructures. Our characterization techniques included X-ray diffraction, FESEM, Raman spectroscopy, and photoluminescence. The XRD results indicate the incorporation of Europium (Eu3+) ions into the crystalline lattice, possibly substituting Zn2+ ions. The incorporation of Europium (Eu3+) doping resulted in decreased crystalline size determined by Scherrer’s equation, decreasing from 48.0 nm to 28 nm demonstrates a decrease in defects within the films. We have thoroughly examined the optical characteristics of both Europium-doped and pure ZnO thin films through a systematic study. The optical properties were assessed by analyzing the absorption spectra within the wavelength range of 200 to 2000 nm. The film exhibits an impressive 80% transparency, particularly noteworthy for window layer application. The incorporation of Eu3+ into host matrix also led to a reduction in the optical bandgap Raman Shift analysis further substantiated the alterations in the optical properties of the films. Upon the inclusion of Eu3+a distinct 5D0–7F2 transition originating from the Eu3+ ions, occurring at approximately 612 nm was detected. The refractive index(n), extinction coefficient (k) and all other associated parameters were found to be impacted by the addition of Europium (Eu3+) to ZnO thin films. The refractive index dispersion relation has been explored using a single oscillator model. Furthermore, the non-linear optical susceptibility (ᵪ) and non-linear refractive index were considered using semi-empirical relationships based on the linear optical parameters. The Europium (Eu3+) doping in ZnO leads to an increase in the ᵪ3 value, elevating it from 1.26*10-11 to 1.34 *10-11 e.s.u. These findings indicate the potential for Eu-doped ZnO nanostructures to serve as a promising platform for the development of efficient multispectral light-emitting diodes (LEDs) and optical devices.

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Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

Zagal-Padilla

Gamboa

2023

Appl. Phys. A

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The influence of predominant native defects in forming ZnO with p-type conductivity is discussed in this work when the semiconductor is synthesized only in water. The semiconductor was prepared by dissolving a Zn-salt in deionized water at 80 °C. The powders were thermally treated at 400 °C in an air atmosphere to obtain well-defined crystalline ZnO. XRD, SEM, EDS, Raman spectroscopy, diffuse reflectance, photoluminescence, and Seebeck effect techniques were used to characterize the synthesized material. The results showed a well-crystalline semiconductor in wurtzite phase. The crystal-oriented growth was the (002) plane. The sample morphology was formed by highly ordered sticks-like. The optoelectronic characterization showed that the synthesized ZnO had a lower band gap than that reported in the literature. It was related to deep energy levels corresponding to oxygen interstitials as the predominant native defects. Raman, EPR, and photoluminescence spectra analysis corroborated the existence of native defects in the crystalline structure. The p-type conductivity of the sample was determined by Seebeck coefficient analysis. A synthesis reaction mechanism involving the formation of oxygen interstitials was proposed in this work. Understanding the effects of native defects in wide band gap semiconductors is necessary to design new materials for sensors or energy conversion applications.

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Impact of samarium on the structural and physical properties of sputtered ZnO thin films

Cited by 10 publications

References 70 publications

ZnO Thin Films: Fabrication Routes, and Applications

ZnO Thin Films: Fabrication Routes, and Applications

Exploration of the optical characteristics in sol-gel synthesized europium-doped zinc oxide thin films for potential optoelectronic use: a comprehensive characterization approach

Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

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