Effects of annealing ZnO films prepared by ion-beam-assisted reactive deposition

Zhang, D.H.; Brodie, Douglas

doi:10.1016/0040-6090(94)90655-6

Cited by 116 publications

(42 citation statements)

References 27 publications

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“…[8,9]. This behavior could be explained by the reduction of V O and Zn i (donor-like defects), giving a corresponding decrease in the carrier density [9]. This explanation is definitely confirmed by the variation of carrier concentration with annealing temperature as shown in Fig.…”

Section: Resultssupporting

confidence: 65%

“…3b. At the annealing temperature above 400 1C, the resistivity did not show a remarkable change like the behavior between the as-grown films and those annealed at 400 1C, indicating that 400 1C may be an adequate annealing temperature to eliminate the donor defects (V O and Zn i ) largely in the asgrown films [9].…”

Section: Resultsmentioning

confidence: 98%

“…XRD patterns of the as-grown and annealed Sb-doped ZnO thin films with different annealing temperatures. [8,9]. This behavior could be explained by the reduction of V O and Zn i (donor-like defects), giving a corresponding decrease in the carrier density [9].…”

Section: Resultsmentioning

confidence: 99%

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Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Wang

Chen

Yin

et al. 2006

Journal of Crystal Growth

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Sb-doped and undoped ZnO thin films were deposited on Si (1 0 0) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (r$1-10 O cm). Annealing in a nitrogen ambient at 400 1C for 1 h made both samples highly resistive (r410 3 O cm). Increasing the annealing temperature up to 800 1C, the resistivity of the undoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 1C became semi-insulating with a resistivity of 10 4 O cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. r

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Section: Resultssupporting

confidence: 65%

Section: Resultsmentioning

confidence: 98%

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Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Wang

Chen

Yin

et al. 2006

Journal of Crystal Growth

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“…Many authors consider that the Schottky barrier height (φ) can be assumed to be the activation energy (E a ) thus determined. [5][6][7][8][9][10][11] At this point, it is important to note that assuming φ = E a implies three conditions that must be fulfilled. a) No gas adsorption/desorption takes place during the heating and cooling processes.…”

confidence: 99%

“…(1) is applied to estimate the φ value by plotting the conductance as a reverse function of temperature, without considering that the gas sensor is being cooled in vacuum, air, or CO, and that tunneling through the barriers can be significant. [5][6][7][8][9][10][11] In this work we will present the behavior of a tin oxide gas sensor under vacuum (<10 -2 mmHg), air (dried using a zeolite trap), and an atmosphere with commercial CO (99.9%). The resulting conductivity as a function of temperature will be interpreted and the limitations on determining the barrier height value will be addressed.…”

confidence: 99%

Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

2012

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The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains

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Characterisation of DC Reactive Magnetron Sputtered ZnO Films Prepared at Different Oxygen Pressures

Subramanyam

Naidu

Uthanna

1999

phys. stat. sol. (a)

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Transparent conductive ZnO films have been prepared at different oxygen pressures in the range 1 × 10—4 to 6 × 10—3 mbar on glass substrates held at a fixed temperature of 663 K by reactively sputtering metallic zinc target in a dc magnetron sputtering system. The deposited films were characterised (at 303 K) to study the influence of oxygen pressure on their structure, electrical and optical properties. Films with a low electrical resistivity of 6.9 × 10—2 Ωcm, high optical transmittance of 83% and an optical band gap of 3.28 eV have been obtained at an oxygen pressure of 1 × 10—3 mbar.

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Effects of annealing ZnO films prepared by ion-beam-assisted reactive deposition

Cited by 116 publications

References 27 publications

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

Characterisation of DC Reactive Magnetron Sputtered ZnO Films Prepared at Different Oxygen Pressures

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