Here we present an easy-reproducible microwave-assisted hydrothermal route for preparing pure nanocrystalline CeO 2 films. The produced materials were characterized using a wide range of techniques (X-ray diffraction, field emission gun scanning electron microscopy, Raman spectroscopy) to understand the synthesis dependent changes in crystallographic structure, and crystallite size. Raman and X-ray diffraction techniques revealed that the films were free of secondary phases and that they crystallize in the cubic structure. The observed hydrodynamic particle size larger than the crystallite size confirms the aggregation phenomenon. Gas sensing measurements have been carried out to rationalize the type and number of surface adsorbed groups and overall nanostructure.Electrical conductance variations, owing to gases adsorption onto semiconductor oxide films surfaces, were observed in this work. Chemiresistive CeO 2 film properties depend on the intergranular barrier heights and width.
The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains
Semiconducting metal oxide (SMOX)-based gas sensors are indispensable for safety and health applications, e.g. explosive, toxic gas alarms, controls for intake into car cabins and monitor for industrial processes. In the past, the sensor community has been studying polycrystalline materials as sensors where the porous and random microstructure of the SMOX does not allow a separation of the phenomena involved in the sensing process. This lead to conduction models that can model and predict the behavior of the overall response, but they were not capable of giving fundamental information regarding the basic mechanisms taking place. The study of epitaxial layers is the definite prove to clarify the different aspects and contributions of the sensing mechanisms that are not possible to do by studying a polycrystalline sample. A detailed analytical model for n and p-type single-crystalline/compact metal oxide gas sensors was developed that directly relates the conductance of the sample with changes in the surface electrostatic potential. Combined DC resistance and work function measurements were used in a compact SnO2 (101) layer in operando conditions that allowed us to check the validity of our model in the region where Boltzmann approximation holds to determine surface and bulk properties of the material.
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