Effects of Annealing on ZnS:Tb, F Electroluminescent Thin Films Prepared by rf Magnetron Sputtering

Abstract

The effects of annealing on sputtered ZnS:Tb, F thin films is investigated by electron probe microanalysis, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It is shown that the annealing decreases the F/Tb atomic ratio from 4 to 1, due to the release of F atoms. It is concluded that many of the F ions not contributing to the formation of luminescent centers with Tb ions exist in as-sputtered film and that efficient Tb-F complex centers are formed by annealing at over 400°C. Luminance is enhanced by increasing the Tb-F complex centers and decreasing the hot-electron scattering centers of the F ions.

AC Thin-Film ZnS:Mn Electroluminescent Device Prepared by Intense Pulsed Ion Beam Evaporation

“…Recently, electroluminescent (EL) ZnS thin films have been widely investigated as the flat panel display devices [1][2][3][4].…”

“…By now, many successful techniques have been used to prepare these films such as an electron-beam evaporation [1], sputtering deposition [2], atomic-layer epitaxy (ALE) [3], and metalorganic chemical vapor deposition (MOCVD) [4].…”