4f–4f Luminescence of Rare‐Earth Centers in II–VI Compounds

Boyn, R.

doi:10.1002/pssb.2221480102

Cited by 125 publications

(32 citation statements)

References 127 publications

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“…In order to consider possible quenching models, it is necessary to first discuss the excitation mechanism. The most widely accepted model for energy transfer between the semiconductor host and the rare-earth ion was first discussed for II-VI compounds 19,20 and InP:Yb, 21,22 followed by a similar model for GaAs:Er. 18,23 In this model, the rare-earth ion introduces either an electron trap below the conduction band or a hole trap above the valence band.…”

Section: Thermal Quenching Propertiesmentioning

confidence: 99%

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Culp

Hömmerich

Redwing

et al. 1997

Journal of Applied Physics

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The photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er were investigated as a function of temperature and applied hydrostatic pressure. The 4 I 13/2 → 4 I 15/2 Er 3ϩ emission energy was largely independent of pressures up to 56 kbar and temperatures between 12 and 300 K. Furthermore, no significant change in the low temperature emission intensity was observed at pressures up to and beyond the ⌫-X crossover at ϳ41 kbar. In contrast, Al x Ga 1Ϫx As:Er alloying studies have shown a strong increase in intensity near the ⌫-X crossover at xϳ0.4. These results suggest that the enhancement is most likely due to a chemical effect related to the presence of Al, such as residual oxygen incorporation, rather than a band structure effect related to the indirect band gap or larger band gap energy. Modeling the temperature dependence of the 1.54 m Er 3ϩ emission intensity and lifetime at ambient pressure suggested two dominant quenching mechanisms. At temperatures below approximately 150 K, thermal quenching is dominated by a ϳ13 meV activation energy process which prevents Er 3ϩ excitation, reducing the intensity, but does not affect the Er 3ϩ ion once it is excited, leaving the lifetime unchanged. At higher temperatures, thermal quenching is governed by a ϳ115 meV activation energy process which deactivates the excited Er 3ϩ ion, quenching both the intensity and lifetime. At 42 kbar, the low activation energy process was largely unaffected, whereas the higher activation energy process was significantly reduced. These processes are proposed to be thermal dissociation of the Er-bound exciton, and energy back transfer, respectively. A model is presented in which the Er-related electron trap shifts up in energy at higher pressure, increasing the activation energy to back transfer, but not affecting thermal dissociation of the bound exciton through hole emission. © 1997 American Institute of Physics. ͓S0021-8979͑97͒03912-1͔

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Section: Thermal Quenching Propertiesmentioning

confidence: 99%

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Culp

Hömmerich

Redwing

et al. 1997

Journal of Applied Physics

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“…A fraction of Er atoms displaced from the (100) row was at the level of few percent only. The (110) aligned spectra have shown that the Er atoms were in fact displaced slightly from the substitutional lattice positions towards the < 110 > channel [16]. Surprisingly, the intra-4f-shell luminescence of Er3+ disappeared entirely when the majority of Er atoms had located substitutionally.…”

Section: Erbium In Iii-v Compoundsmentioning

confidence: 99%

“…The partially covalent character of the Yb-P bond [15] should also be favourable for substitutional location of Yb. Moreover, covalent effects, understood as the admixture of ligand wave function to the 4f-electron wave function of Yb3+ ions relax the parity selection rule thus making parity forbidden dipole transitions in the 4f-shell possible [16].…”

Section: Local Ahoy Disorder Probing With Yb3+ Ionsmentioning

confidence: 99%

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

Kozanecki

1993

Acta Phys. Pol. A

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Lattice location experiments performed on Yb-and Er-doped III-V semiconducting compounds using Rutherford backscattering and channeling have been reviewed. It has been shown that Yb atoms locate substitutionally in InP and InP-based ternary alloys, while in gallium compounds no substitutional fraction of Yb could be detected. An intense intra-4f-shell luminescence of Yb3 + has been observed in In compounds. The photoluminescence spectra of Yb3 + reflect local alloy disorder in InPAs and GaInP, suggesting that the Yb atoms are tetrahedrally coordinated. No Yb-related emission could be observed in gallium compounds, except a weak Yb3+ photoluminescence in GaP. An evidence has been presented that Er atoms introduced into III-V compounds locate predominantly at interstitial positions. In GaAs they move into tetrahedral lattice sites as a result of thermal annealing at temperatures higher than 600°C. The location of Er atoms at substitutional positions is accompanied with the disappearance of the intra-4f-shell luminescence of Er3 +. The reasons of the observed correlation of luminescence properties and positions of Er and Yb atoms in zincblende lattices are discussed.

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“…Si:Er with O and other light impurities proved a dramatic increase in the emission efficiency and a shift of the onset of thermal quenching to much higher temperature [21]. It is well known that codoping of RE in II-VI compounds is prerequisite for their optical activity [22]. Moreover, photoluminescence efficiency of the RE complexes in ionic hosts is usually the largest.…”

Section: Re Doping Of Siliconmentioning

confidence: 99%

Implantation of Rare-Earth Atoms into Si and III-V Compounds

1993

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Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10 18 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.PACS numbers: 61.80. Jh, Introductory remarksRecently we witness a burst of interest in the doping of Si and III-V compound semiconductors with rare earths (RE). The attention to these exotic dopants was attracted by their potential utilization in constuction of novel light emitting devices (LEDs). Rare earth doped semiconduction are expected to combine the well-known sharp, temperature stable, ultra narrow, atomic-like emission originating from the electronic transitions within the 4f shell of RE impurities with the efficient electrical pumping of this emission by electrons and holes. The inherently long lifetime of the 4f emission limits a possible light output from these devices to small power in a microwatt range. However, if RE doping of Si would result in the constuction of non-degrading efficient LEDs, even with a moderate quantum efficiency at room temperature, then this could lead to a real intrachip (59) 60A. Kozanecki' J.M. Langer' A.R. Peaker optical communication -a long awaited technological goal in the field of VLSI circuits [1,2].Rare earths are very often used as the light emitting centres in wide energy gap ionic crystals and glasses. In fact, most powerful solid state lasers are made of an Nd doped glass. REs are also often utilised in other solid state lasers. In all these cases high dopant concentration is achieved during the crystal or glass growth by adding required amounts of appropriate RE compound to the melt from which a laser rod is pulled out.In semiconductor devices, the active volume is much smaller and planar technologies dominate processing. Very low solubility of REs in covalent semiconduction narrows the range of available technologies of the growth of RE doped semiconduction to non-equilibrium techniques. Among them, two are feasible. One bases on metalloorganic chemical vapour deposition (MOCVD) -a standard technology for semiconductor growth. Initial problem of finding suitable RE compound which would crack in the MOCVD reactor seems to be finally resolved. This technology has been mastered particularly by the group of. K. Takahei [3]. Alternative technology, most suitable for Si doping with REs, is ion implantation, which will be the main topic of our review.Additional problem related to RE doping of Si and III-V compounds is caused by extremely high chemical activity of the RE elements, particularly their notorious affinity to oxygen and other group-VI elements. This can be turned into advantage, however, in the purification of the materials grown from the melt (i.e. liquid phase epitaxy) in the presence of REs [4]...

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4f–4f Luminescence of Rare‐Earth Centers in II–VI Compounds

Cited by 125 publications

References 127 publications

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Lattice Location of Rare Earth Ions in Semiconductors and Their Optical Activity

Implantation of Rare-Earth Atoms into Si and III-V Compounds

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