Between October 1983 and August 1998, 31 patients with non-union or bone defect of the tibia have undergone 32 vascularized fibula transfers to reconstruct lower legs. Of these 32 vascularized fibula transfers, there were 19 pedicle transfers from the ipsilateral leg. There were 17 males and two females. The average patient age was 53 (21 to 84) years old. All patients achieved good bone reconstruction. All patients are currently able to walk without a brace, except for one. As to major complications, three of these 19 had delayed union, with only one postoperative fracture. In the cases with delayed union or fractured grafted fibulas, the periods to walking without a brace were longer than in the cases without such major complications. From the results, the ipsilateral pedicle vascularized fibula graft appears to be a useful option for reconstruction of tibial defects.
ZnS:Mn thin film electroluminescent devices having doubly-stacked insulating layers have been developed. The insulating layer consists of electron-beam evaporated Ta2O5, and rf-magnetron sputtered SiO2 stacked layers. It is concluded that the thick semi-insulating Ta2O5 films (1000 nm) deposited on both sides of the ZnS:Mn active layer act as a carrier injctor for electroluminescence and the thin insulating SiO2 films (80 nm) inserted between the electrodes and Ta2O5 films act as a carrier limiter. The breakdown voltage margin defined by (V
bd-V
th)/V
th was improved from 15% to more than 80% by introducing thick semi-insulating Ta2O5 films.
The effects of annealing on sputtered ZnS:Tb, F thin films is investigated by electron probe microanalysis, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It is shown that the annealing decreases the F/Tb atomic ratio from 4 to 1, due to the release of F atoms. It is concluded that many of the F ions not contributing to the formation of luminescent centers with Tb ions exist in as-sputtered film and that efficient Tb-F complex centers are formed by annealing at over 400°C. Luminance is enhanced by increasing the Tb-F complex centers and decreasing the hot-electron scattering centers of the F ions.
To clarify the difference in ZnS:Tb,F films fabricated by electron-beam evaporation (EB) and by rf magnetron sputtering (SP), the doping condition of Tb and F ions was investigated by electron probe micro analysis and secondary ion mass spectroscopy. The F/Tb atomic ratio of 3 and EL spectra for EB films are found to be hardly affected by annealing. As the model for luminescent centers, it is proposed that the Tb and F ions are substituted for Zn and three S ion sites, respectively, with two Zn vacancies for satisfying charge compensation. For the SP films, interstitial F ions are released from ZnS film and Tb-F complex centers are formed by annealing.
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