Effect of thermal annealing on Ni/Au contact to a-InGaZnO films deposited by dc sputtering

Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

“…IGZO ceramics with molar fractions (In 2 O 3 :Ga 2 O 3 :ZnO) of 1:1:1 and 1:1:2 were investigated because these two fractions are the predominant compositions of IGZO films [1][2][3][4][5][6][7][8][9]. In this study, these two IGZO ceramics were designated as IGZO-111 and IGZO-112.…”

“…In addition, the resistivities of amorphous IGZO-111 and IGZO-112 sputtered films reported in the literature range from 5 × 10 −3 cm to 10 4 cm and 4 × 10 −3 cm to 10 5 cm, respectively, depending on the sputtering parameters [2,4,5,7,8]. The amorphous structure of IGZO-111 film can be retained even after annealing at 600 • C in argon [9]. These results show that the resistivities of In 2 Ga 2 ZnO 7 and InGaZnO 4 crystal phases were generally lower than those of amorphous IGZO structure.…”

“…Amorphous indium-gallium-zinc-oxide (IGZO) film exhibits outstanding electrical performance and visible transparency, so it is widely used as the channel material of thin-film transistors [1][2][3][4][5][6][7][8][9]. Among the deposition techniques of thin films, magnetron sputtering is a dominant preparation method due mainly to its low coating temperature, high coating rate, good quality of the film, and high feasibility for large-area deposition [10][11][12].…”

“…Among the deposition techniques of thin films, magnetron sputtering is a dominant preparation method due mainly to its low coating temperature, high coating rate, good quality of the film, and high feasibility for large-area deposition [10][11][12]. The effects of various sputtering parameters, particularly the oxygen partial pressure, on the properties of IGZO films have been the focus of previous research [1][2][3][4][5][6][7][8][9]. Recently, several studies [13][14][15][16][17][18][19][20][21] have demonstrated that the characteristics of the sputtering targets for various oxide thin films play important roles on the preparation and the performances of sputtered films.…”

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

“…[27][28][29][30][31][32][33] For instance, the a-IGZO TFTs used in most prototype displays were subjected to a thermal annealing process over 300 C to improve mobility, hysteresis, and stability. 28 Thus, the thermal annealing processes at different temperatures [27][28][29] and under various atmospheres such as in air, 7 N 2 , 10 O 2 , 30 moisture, 1 and O 3 32 have been investigated and found to greatly influence the transistors' performance. However, these reported single-step thermal annealing processes were inconsistent.…”