“…[27][28][29][30][31][32][33] For instance, the a-IGZO TFTs used in most prototype displays were subjected to a thermal annealing process over 300 C to improve mobility, hysteresis, and stability. 28 Thus, the thermal annealing processes at different temperatures [27][28][29] and under various atmospheres such as in air, 7 N 2 , 10 O 2 , 30 moisture, 1 and O 3 32 have been investigated and found to greatly influence the transistors' performance. However, these reported single-step thermal annealing processes were inconsistent.…”