Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Wu, Ming-Wei; Chang, Shih-Hsien; Chaung, Wei-Ming; Huang, Hao

doi:10.1016/j.jeurceramsoc.2015.06.029

Cited by 21 publications

(6 citation statements)

References 40 publications

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“…Besides, the geometrical density of the pellets was of the order of 80% at this stage. This observation is consistent with recent results that showed that high temperatures are required to obtain dense pellets, of the order of 1300°C‐1400°C, which leads to a difficult compromise between the need for a sufficiently high temperature for the densification, but sufficiently low to limit the volatilization . However, we wish to mention that it has been shown recently that the sintering temperature can be reduced to 1200°C for m = 1 by the assistance of CSP, which may be promising to obtain dense pellets of these homologous compounds if this result can be generalized to the whole series.…”

Section: Resultssupporting

confidence: 90%

“…This observation is consistent with recent results that showed that high temperatures are required to obtain dense pellets, of the order of 1300°C-1400°C, which leads to a difficult compromise between the need for a sufficiently high temperature for the densification, but sufficiently low to limit the volatilization. 22,24 However, we wish to mention that it has been shown recently that the sintering temperature can be reduced to 1200°C for m = 1 by the assistance…”

Section: Resultsmentioning

confidence: 99%

“…1,21 In the past few years, several new synthesis paths have been proposed to overcome this issue, using optimized synthesis routes for nanocrystalline precursors to improve the density of the green pellets, multi-stage annealing, or cold sintering process (CSP)-assisted densification (see for example Ref. [22,23]). However, these methods still require sintering temperatures larger than 1200°C, with a competition between densification, volatilization, and the possible presence of secondary phases.…”

Section: Introductionmentioning

confidence: 99%

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SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

et al. 2020

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In this study, we report on the use of a two‐stage annealing treatment at 1100°C coupled to reactive Spark Plasma Sintering to reduce the synthesis temperature of InGaO3(ZnO)m (m = 1 to 9) dense polycrystalline pellets below 1200°C, in order to suppress the volatilization of ZnO and get a better control of the crystalline quality of the pellets. We show that using this treatment, dense single‐phase pellets can be prepared with randomly oriented grains. Besides, we evidence a monotonic evolution of the band gap in the series from 3.27 eV in InGaO3(ZnO) to 3.02 eV in InGaO3(ZnO)9, as well as a non‐monotonic evolution of the lattice thermal conductivity that reaches a minimum for InGaO3(ZnO)3, lower than 2 W m−1 K−1 above 350°C. Last, we propose a procedure for the high‐temperature measurement of the thermal diffusivity of oxides by the laser flash method to avoid possible reactions between the measured material and the graphite spray.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

et al. 2020

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“…Previous research efforts on ZnO‐based thin films have predominantly focused on aluminum‐doped zinc oxide thin films 7–9 . However, as technology and living standards continue to advance, there is a growing demand for display technology 10 . It has been observed that the deposition process exhibits a high reactivity of the Al element, leading to its easy oxidation and subsequent formation of the Al 2 O 3 phase, thereby diminishing the electrical conductivity of the film.…”

Section: Introductionmentioning

confidence: 99%

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

Liu,

Sun,

Zhang

et al. 2024

J Am Ceram Soc.

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The phase‐field method was employed to simulate the effects of pores on grain growth in the indium gallium zinc oxide (IGZO) targets during conventional and two‐stage sintering (TSS). The findings indicated that the TSS method effectively suppressed the rapid growth of grains. With an increase in porosity and a more prominent pore size, the rate of grain growth accelerated, resulting in the formation of coarser grains. Subsequently, IGZO targets were fabricated using the molding‐cold isostatic pressing (CIP) and TSS methods. The densification activation energies of IGZO green compacts were calculated to be 510 and 370 kJ/mol for CIP at 180 and 250 MPa, respectively, utilizing the main sintering curve (MSC). Additionally, by optimizing the TSS process, a highly dense IGZO target with a relative density of 99.53%, a resistivity of 4.3 mΩ/cm, and an average grain size of 8.59 µm was successfully achieved.

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“…However, the studies about preparing the IGZO ceramics are very few. Wu et al 11 prepared the green IGZO (In:Ga: Zn = 1:1:1 and 2:2:1) by uniaxial dry pressing at a pressure of 150 MPa. Lo et al 12 pressed the powder mixture into a disc form at a pressure of 100 MPa and got the highest relative density of 93% at the sintering temperature of 1300°C.…”

Section: Introductionmentioning

confidence: 99%

Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

Liu

Shu

Zeng

et al. 2018

Int J Applied Ceramic Tech

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High-purity In 2 O 3 , Ga 2 O 3 and ZnO (In:Ga:Zn = 1:1:1) mixtures were employed to fabricate the IGZO (In-Ga-Zn-O) ceramics by slip casting. The rheological properties and zeta potential of IGZO slurry were analyzed in details. The optimum amount of dispersant used in the IGZO slurry is studied in details. This study investigated the relationship between the phase composition of sintered IGZO ceramics and sintering temperatures. The IGZO ceramics with high density and low resistivity are successfully synthesized in an air atmosphere, and their grain size is distributed uniformly.

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Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Cited by 21 publications

References 40 publications

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

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Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Cited by 21 publications

References 40 publications

SPS‐assisted synthesis of InGaO3(ZnO)m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO3(ZnO)m ceramics, and influence of m on the band gap and the thermal conductivity

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

Contact Info

Product

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SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity