Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

Liu, Yang; Shu, Yongchun; Zeng, Xueyun; Sun, Bin; Peng, Liang; Zhang, Yu; Qiu, Chen; Yi, Jianhong; He, Jilin

doi:10.1111/ijac.13100

Cited by 14 publications

(7 citation statements)

References 28 publications

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“…Besides, the geometrical density of the pellets was of the order of 80% at this stage. This observation is consistent with recent results that showed that high temperatures are required to obtain dense pellets, of the order of 1300°C‐1400°C, which leads to a difficult compromise between the need for a sufficiently high temperature for the densification, but sufficiently low to limit the volatilization . However, we wish to mention that it has been shown recently that the sintering temperature can be reduced to 1200°C for m = 1 by the assistance of CSP, which may be promising to obtain dense pellets of these homologous compounds if this result can be generalized to the whole series.…”

Section: Resultsmentioning

confidence: 87%

“…This observation is consistent with recent results that showed that high temperatures are required to obtain dense pellets, of the order of 1300°C-1400°C, which leads to a difficult compromise between the need for a sufficiently high temperature for the densification, but sufficiently low to limit the volatilization. 22,24 However, we wish to mention that it has been shown recently that the sintering temperature can be reduced to 1200°C for m = 1 by the assistance…”

Section: Resultsmentioning

confidence: 99%

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SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

et al. 2020

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In this study, we report on the use of a two‐stage annealing treatment at 1100°C coupled to reactive Spark Plasma Sintering to reduce the synthesis temperature of InGaO3(ZnO)m (m = 1 to 9) dense polycrystalline pellets below 1200°C, in order to suppress the volatilization of ZnO and get a better control of the crystalline quality of the pellets. We show that using this treatment, dense single‐phase pellets can be prepared with randomly oriented grains. Besides, we evidence a monotonic evolution of the band gap in the series from 3.27 eV in InGaO3(ZnO) to 3.02 eV in InGaO3(ZnO)9, as well as a non‐monotonic evolution of the lattice thermal conductivity that reaches a minimum for InGaO3(ZnO)3, lower than 2 W m−1 K−1 above 350°C. Last, we propose a procedure for the high‐temperature measurement of the thermal diffusivity of oxides by the laser flash method to avoid possible reactions between the measured material and the graphite spray.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

et al. 2020

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“…The zeta potentials of In 2 O 3 and Cl-GQDs had different signs, which was helpful for the attachment of Cl-GQDs to In 2 O 3 surface by electrostatic attraction. 41,42 Besides, the zeta potential of Cl-GQDs/In 2 O 3 was 2.6 mV, which proved that the Cl-GQDs were successfully attached to the surface of In 2 O 3 and the simple ultrasonic treatment was feasible. Photoluminescence spectra of In 2 O 3 and Cl-GQDs/In 2 O 3 under excitation of 365 nm were shown in Fig.…”

Section: Resultsmentioning

confidence: 85%

Photoelectrochemical Behavior of Simple Synthesized Cl-GQDs/In₂O₃

Li¹,

Wang²,

Lei³

et al. 2022

J. Electrochem. Soc.

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The morphology and optical properties of simple synthesized chlorine-doped graphene quantum dots (Cl-GQDs) were synthesized by transmission electron microscopy, photoluminescence, and UV-vis spectrometry. The Cl-GQDs/In2O3 were synthesized by an ultrasonic treatment and the morphology, structure and composition, band gap, and surface area were analyzed by different techniques. The effect of the mass percentage of Cl-GQDs on the photoelectrochemical (PEC) behavior of In2O3 was investigated, and the results showed that 3 wt% Cl-GQDs could effectively improve the separation of photogenerated carriers. Moreover, the photocurrent density of 3 wt% Cl-GQDs/In2O3 was about ten times that of pure In2O3. Cyclic voltammetry measurements of Cl-GQDs/In2O3 under dark and light were compared to further investigate the capacitive effect of Cl-GQDs, and the results indicated that Cl-GQDs could store photogenerated electrons, inhibiting the recombination of electron-hole pairs. This work was expected to be helpful for enhancing the PEC performance of In2O3 and extending the application of Cl-GQDs.

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“…This phenomenon follows the results obtained from phase‐field simulations. CIP enhances the compaction of the powder, reduces the volume of internal pores within the compact, increases the contact points between powder particles, facilitates the channels of material migration, and improves the sintering activity 31,32 …”

Section: Resultsmentioning

confidence: 99%

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

Liu,

Sun,

Zhang

et al. 2024

J Am Ceram Soc.

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The phase‐field method was employed to simulate the effects of pores on grain growth in the indium gallium zinc oxide (IGZO) targets during conventional and two‐stage sintering (TSS). The findings indicated that the TSS method effectively suppressed the rapid growth of grains. With an increase in porosity and a more prominent pore size, the rate of grain growth accelerated, resulting in the formation of coarser grains. Subsequently, IGZO targets were fabricated using the molding‐cold isostatic pressing (CIP) and TSS methods. The densification activation energies of IGZO green compacts were calculated to be 510 and 370 kJ/mol for CIP at 180 and 250 MPa, respectively, utilizing the main sintering curve (MSC). Additionally, by optimizing the TSS process, a highly dense IGZO target with a relative density of 99.53%, a resistivity of 4.3 mΩ/cm, and an average grain size of 8.59 µm was successfully achieved.

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Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

Cited by 14 publications

References 28 publications

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

Photoelectrochemical Behavior of Simple Synthesized Cl-GQDs/In₂O₃

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

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Study on the sintering behavior and characterization of the IGZO ceramics by slip casting

Cited by 14 publications

References 28 publications

SPS‐assisted synthesis of InGaO3(ZnO)m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO3(ZnO)m ceramics, and influence of m on the band gap and the thermal conductivity

Photoelectrochemical Behavior of Simple Synthesized Cl-GQDs/In2O3

Investigate the relationship between densification and grain size of IGZO target by phase‐field simulation

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Product

Resources

About

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

SPS‐assisted synthesis of InGaO₃(ZnO)_m ceramics, and influence of m on the band gap and the thermal conductivity

Photoelectrochemical Behavior of Simple Synthesized Cl-GQDs/In₂O₃