Comparative study of aluminum and nickel contact electrodes for indium–tin–zinc oxide thin film transistors using oxygen vacancy diffusion model

Park, Joong−Hyun; Shin, Myunghun; Yi, Junsin

doi:10.1016/j.mssp.2020.105253

Cited by 7 publications

(12 citation statements)

References 39 publications

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“…The final concern is associated with the Δ L ’s calculated from the fabricated devices, which have been controversially discussed to have either positive or negative value for oxide TFTs. − According to eq , the positive Δ L means that the L eff is expected to be reduced rather than the L designed in device layout. This is common for the self-aligned TFTs, where dopants in S/D region can be diffused laterally into the channel, shortening the actual distance of L .…”

Section: Resultsmentioning

confidence: 99%

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Lee

Kwon²,

Seong³

et al. 2022

ACS Appl. Electron. Mater.

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To verify the effects of process conditions for the TFTs employing In−Ga−Zn-O (IGZO) channels prepared by atomic layer deposition (ALD), such as cationic composition of channel and/or source/drain (S/D) electrodes, the device characteristics including the field-effect mobility (μ FE ), the contact resistance (R C ), and the channel length deviation (ΔL) were systematically investigated for the ALD IGZO thin film transistors (TFTs) fabricated with controlling the ALD subcyclic ratios and with variations in S/D electrodes of indium−tin-oxide (ITO) and molybdenum (Mo). The ALD temperature was fixed at 200 °C. When the subcyclic ratios of precursors (triethyl indium: In−Ga bimetallic: diethyl zinc) were modulated to 0:2:2, 1:2:2, and 2:2:2, the cationic compositions (In:Ga:Zn) were determined to be 1.

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Section: Resultsmentioning

confidence: 99%

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Lee

Kwon²,

Seong³

et al. 2022

ACS Appl. Electron. Mater.

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“…These efforts, as depicted in Fig. 3, can be broadly categorized into five areas: active layer optimization [38−62] , gate dielectric optimization [64−73] , electrode optimization [74,75] , interface optimization [77−84] , and device structure optimization [85−91] .…”

Section: Advances In High-mobility Itzo Tftsmentioning

confidence: 99%

“…The contact between the source and drain electrodes and the active layer, serving as the emission and collection ports of channel electrons, is a critical aspect of this debate that is worth exploring. However, there has been little research conducted on this aspect for ITZO TFT electrodes [74,75] . In 2015, Park et al [74] conducted a comparison of nickel (Ni), indium tin oxide (ITO), and Al electrodes' compatibility with ITZO TFTs.…”

Section: Electrode Optimization Engineeringmentioning

confidence: 99%

“…However, there has been little research conducted on this aspect for ITZO TFT electrodes [74,75] . In 2015, Park et al [74] conducted a comparison of nickel (Ni), indium tin oxide (ITO), and Al electrodes' compatibility with ITZO TFTs. The authors showed that Ni has the smallest contact resistance with ITZO due to the closest work function match, resulting in the best I on performance (Figs.…”

Section: Electrode Optimization Engineeringmentioning

confidence: 99%

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Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

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Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

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“…There had been a few reports on the influence of electrode/semiconductor contact resistance on their μ FE but rarely on the relationship between the S/D process and V th. , …”

Section: Introductionmentioning

confidence: 99%

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Yang

Gao

et al. 2023

ACS Appl. Electron. Mater.

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In this work, the source/drain (S/D) electrode process is considered to have a great impact on the mobility (μ FE )− threshold (V th ) trade-off for high-mobility amorphous oxide semiconductor (AOS) thin-film transistors. High-mobility AOS materials have worse oxygen-fixation ability compared to InGaZnO. In this work, we show that this is the case for the Mo S/D electrode process on InSnZnO channels and has a great impact on the mobility-threshold trade-off. Oxygen vacancy gradients are observed in the depth profile X-ray photoelectron spectroscopy analysis on InSnZnO after Mo S/D deposition and show a bigger change in oxygen vacancies (V O ) between the surface and inner layers and thicker compared to InGaZnO. This leads to an obvious negative shift in V th or even no switching characteristic. Postprocessing such as oxygen-plasma treatment can make V th positive but degrade the μ FE . In situ replenishing oxygen via adopting ITO S/D electrodes deposited in an oxygen-containing atmosphere facilitates the achievement of excellent overall electrical characteristics, with μ FE up to 87.1 cm 2 /Vs, V th ∼ −0.64 V, and I on /I off ∼ 2.3 × 10 8 .

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Comparative study of aluminum and nickel contact electrodes for indium–tin–zinc oxide thin film transistors using oxygen vacancy diffusion model

Cited by 7 publications

References 39 publications

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Advances in mobility enhancement of ITZO thin-film transistors: a review

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

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