Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)

Heinecke, H.; Baur, B.; Höger, R.; Jobst, B.; Miklis, A.

doi:10.1016/0022-0248(92)90455-r

Cited by 34 publications

(10 citation statements)

References 13 publications

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“…At V/III ¼ 25, both surface pits and faceting were avoided, which may lead to narrower linewidths due to better compositional uniformity. 99,100 PL intensity and n 0 were closely correlated across V/III ratios (Figs. 21 and 22).…”

Section: Ingaas(111)b: Photoluminescencementioning

confidence: 84%

“…An increase in linewidth with surface roughness suggests that rougher surfaces have spatially nonuniform incorporation of indium and gallium adatoms. In some quaternary alloys, small adjustments in the surface orientation can significantly change the alloy composition, 99,100 which can lead to compositional nonuniformity for rough surfaces. Comparing the PL in Fig.…”

Section: Ingaas(111)b: Photoluminescencementioning

confidence: 99%

“…Facetdependent incorporation rates have been observed for a number of materials including GaAs, 118,119 InGaN, 120 and InGaAsP. 99,100 For the latter two materials, different incorporation rates of each atomic species produce orientationdependent alloy compositions. Similarly, for InGaAs(110), indium and gallium are likely to incorporate at different rates on different facets, leading to the appearance of the additional PL peaks.…”

Section: Ingaas(110): Photoluminescencementioning

confidence: 99%

See 2 more Smart Citations

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: Ingaas(111)b: Photoluminescencementioning

confidence: 84%

Section: Ingaas(111)b: Photoluminescencementioning

confidence: 99%

Section: Ingaas(110): Photoluminescencementioning

confidence: 99%

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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This is because the orientation of the substrate will affect the growth dynamics, and hence result in different surface morphologies, growth rate and different compositions in alloy [1][2][3]. For example, for growth of high-quality AlGaInP epilayers by MOCVD, usually GaAs substrates with a miscut (7 or more) are utilized to suppress the spontaneous ordering in the epilayers [4].…”

Section: Introductionmentioning

confidence: 99%

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Dong

Chua

Wang

et al. 2004

Journal of Crystal Growth

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“…These results agree with literature data where a de- crease of As incorporation into quaternary GaInAsP layers with increasing substrate orientation has been reported. 26 A possible explanation is that the formation of strained layers ͑in this case by As incorporation͒ is energetically less difficult on exactly oriented substrates without surface steps than on off-oriented substrates, since the deposition of strained layers on stepped surfaces leads to the formation of local strain fields being highest at the step edges. 24 The data in Table II show that an increase of the PH 3 flux f PH 3 in the InP barriers leads to a decrease of the incorporated strain into the InP layers for constant TMIn flux.…”

Section: Influence Of the Growth Parameters On The As Incorporatiomentioning

confidence: 99%

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

Marschner

Brubach

Verschuren

et al. 1998

Journal of Applied Physics

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We present x-ray diffraction (XRD) investigations of the structure of nominally lattice-matched GaInAs/InP multiple quantum well (MQW) structures grown by chemical beam epitaxy (CBE). To obtain information about the individual MQW layers and the interface structure we make use of the x-ray interference effect between two layers of equal lattice constant but different layer thickness separated by ultrathin strained (interfacial) layers. This effect predicted by the dynamical diffraction theory provides a powerful tool to quantitatively investigate ultrathin single quantum well structures and monolayer thin interfaces as well as MQW structures. For a given switching sequence during CBE growth, we determine the interface structure of GaInAs/InP MQW structures within the limits given by XRD theory. Additionally we found that an As gradient from the GaInAs quantum well layers into the InP barrier layers is present. The influence of the substrate off-orientation, the growth rate, and the group V flux in the InP barriers on the total amount of strain incorporated into the InP layers is shown. The obtained results indicate that the mechanism of As incorporation into InP layers is similar to the mechanism observed for the As incorporation into (qua)ternary GaxIn1−xAsyP1−y layers.

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Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)

Cited by 34 publications

References 13 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

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