Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate

“…The Sb incorporation efficiency of the 151 off samples is lower than that of 01, 21, and 61 off samples. Similar effect can be observed in AlGaInP grown on GaAs substrates [12]. The In adatom has larger size and poor stability on the surface with larger tilt angle compared with Al and Ga adatoms.…”

“…Additionally, the different substrate orientations have various dangling bonds and step densities on the growing surface. These differences would affect the distribution coefficient of Sb adatom [12]. The Sb incorporation efficiency of the 151 off samples is lower than that of 01, 21, and 61 off samples.…”

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

“…The nand p-type doping sources were SiH 4 and diethylzinc, respectively. N-type GaAs substrates with the surface orientation of (1 0 0) 71 off towards /1 1 1SA were employed to avoid the formation of ordering in AlGaInP layers [14], which has a detrimental effect on the optical quality in terms of emission intensity and line width [15]. The growth temperature was set at 675 1C and the growth chamber pressure at 100 mbar.…”

Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

“…Higher miscut substrates have lower In composition for the same growth conditions. 10 Shown in Figure 5 is the HR-XRD data for the control sample and the Ge/Si template sample. The scan on the control sample shows the top cell to be compressively strained -691 seconds, which corresponds to an indium composition of about 53% indium, assuming it's 100% strained.…”