“…Surface preparation has a long history in semiconductors and is reviewed in the reference [30]. We choose Sulfur Treatment owing to two primary considerations: first, the compatibility of Sulfur with the chemistry of MoS 2 and second, a historically large success rate in creating better contacts through Sulfur Passivation in several semiconductors like Germanium [31][32][33], Silicon [34,35] and other compound semiconductors [36]. In order to preserve the metal-semiconductor interface we select two high work function metals Nickel (5.0 eV) and Palladium (5.6eV) [24] which do not react with MoS 2 and are not prone to oxidation during deposition.…”