Our findings indicate that cranberry-containing products are associated with protective effect against UTIs. However, this result should be interpreted in the context of substantial heterogeneity across trials.

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Small valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Single crystalline In 1−x Ga x N films containing high In content (70%-100%) were grown by metalorganic vapor phase epitaxy. A linear relation was observed between the lattice constants and gas phase Ga/ In ratios. The surface morphology changed from pyramid for InN to more planar ones for the InGaN alloys with increasing Ga content. The electron mobility decreased rapidly from 1200 cm 2 / V s for InN to less than 100 cm 2 / V s for In 0.7 Ga 0.3 N, with a carrier concentration of low-10 19 cm −3 for all the as-grown films. Using photoluminescence a single emission peak was observed at 1.4-1.6 m for the In-rich InGaN with decreasing wavelengths up to below 20% of Ga. Two peaks were observed for the In 0.80 Ga 0.20 N, however, indicating possible phase separation. The x-ray photoelectron spectroscopic measurement showed shifts to higher binding energies for both In and Ga with increasing Ga content. The estimated alloy composition, however, depended sensitively on the sputtering conditions of the samples.