Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Ruan, Cheng; Lin, Yow−Jon; Chen, Ya Hui; Chang, Hsing Cheng

doi:10.1016/j.mssp.2015.01.005

Cited by 9 publications

(1 citation statement)

References 44 publications

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“…This consequence may be caused by the capacitance of the thin layers, which is more sensitive to the interface properties as reported in Ref. [32]. This detail occurs because of the interface states that respond differently to low and high frequencies.…”

Section: Capacitance-voltage Characteristics Studymentioning

confidence: 86%

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*

et al. 2017

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Control of the electronic parameters on a novel metal–oxide–semiconductor (MOS) diode by indium doping incorporation is emphasized and investigated. The electronic parameters, such as ideality factor, barrier height (BH), series resistance, and charge carrier density are extracted from the current–voltage (I–V) and the capacitance–voltage (C–V) characteristics. The properties of the MOS diode based on 4%, 6% and 8% indium doped tin oxide are largely studied. The Ag/SnO /nSi/Au MOS diode is fabricated by spray pyrolysis route, at 300 °C from the In-doped SnO layer. This was grown onto n-type silicon and metallic (Au) contacts which were made by thermal evaporation under a vacuum @ 10 Torr and having a thickness of 120 nm and a diameter of 1 mm. Determined by the Cheung-Cheung approximation method, the series resistance increases (334–534 ) with the In doping level while the barrier height (BH) remains constant around 0.57 V. The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500 . The indium doping level influences on the characteristics of Ag/SnO :In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.

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Section: Capacitance-voltage Characteristics Studymentioning

confidence: 86%

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*

et al. 2017

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Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes

et al. 2015

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The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu 2 ZnSnS 4 (CZTS) and n-type Si is investigated. The temperature-dependent current-voltage (I-V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of -30 * 90°C. The temperature dependence of forward bias I-V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si-S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I-V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.

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Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

Yükseltürk

Surucu

Terlemezoglu

et al. 2021

J Mater Sci: Mater Electron

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Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Cited by 9 publications

References 44 publications

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*

Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes

Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

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Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

Cited by 9 publications

References 44 publications

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications*

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications*

Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes

Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

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Product

Resources

About

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*

Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications^*