Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

Yükseltürk, Esra; Surucu, O.; Terlemezoglu, M.; Parlak, M.; Altındal, Ş.

doi:10.1007/s10854-021-06378-4

Cited by 21 publications

(8 citation statements)

References 49 publications

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“…Figure 6 shows that when light power (P) rose, photocurrent values (I ph ) grew linearly with decreasing negative voltage. This linear relationship is given by the power law shown below [32][33][34][35][36]:…”

Section: = -F *mentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

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Section: = -F *mentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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“…The increase of photogenerated charges in the light led to decreases in both Rs and Rsh [61]. Moreover, since high Rs and low Rsh decrease the short circuit current (Isc) and open voltage (Voc), they negatively affect the fill factor (FF) and efficiency parameters [62]. In addition, the low Rsh may offer a distinct conduction pathway for light-induced current and energy losses in photodiodes and solar cells [63], which is undesirable since it results in an increase in the leakage current.…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 99%

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

et al. 2023

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The aim of this work is to provide an alternative to optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc organic semiconductor compound onto a graphite-like carbon (GC) thin film using the thermal evaporation technique, and fabricated an organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. The heterojunction had a transmittance of approximately 60% in the visible region, an absorption coefficient of ~106 m-1, and an energy band gap of 2.6 eV. Subsequently, Ag contacts were grown on the surface of each layer, and the Ag/MnPc/GC/Ag photodiode was subjected to fundamental electrical analysis at various light intensities and a ±3 V applied potential. Analysis in a dark environment revealed that the photodiode had a rectification ratio of 2.59 x 103, a series resistance of 28 Ω, and a shunt resistance of 4.17 x 104 Ω, as calculated from Ohm's law. The diode ideality factor and barrier height of the photodiode were determined from thermionic emission theory to be 5.60 and 0.71 eV, respectively, and it was observed that these decreased with increasing light intensity. The photodetector parameters of the MnPc/GC hybrid photodiode were determined under positive and negative applied potentials at various light intensities. The highest photocurrent, photoconductive responsivity, photosensitivity, and specific detectivity were determined to be 1.512 x 10-1 A, 11.52 A.W-1, 9.83 x 105, and 2.48 x 1012 Jones, respectively, which were significantly higher than those reported in literature for organic and inorganic-based photodiodes. Based on the findings, it was concluded that the Ag/MnPc/GC/Ag photodiode holds promise as an alternative for sensors, solar cells, photodetectors, and optoelectronic communications applications.

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“…The following expression can be used to analyse the photoconductive behaviour of photo-diodes/solar cells The diode samples' photoconduction mechanisms type are indicated by the m value. The photoconduction mechanism is relevant to the trap levels when m is between 0.5 and 1; but, if the m value is more than 1, the photoconduction mechanism relevant to lower density of unoccupied trap levels [50][51][52][53]. On the other hand, the linear dynamic range (LDR) of a photodetector is known as the range in which the current response of the photodetector is linearly proportional to the light intensity, as stated by the following relationship;…”

Section: Comparison I-v Characteristicsmentioning

confidence: 99%

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

Demirezen,

Dere,

Çetinkaya

et al. 2023

Phys. Scr.

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Graphene oxide (GO) doped poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) interlayered Al/p-Si Schottky barrier diodes (SBDs) were manufactured by spin coating technique and investigated for the effects of GO concentration on electrical and photodiode parameters. The current-voltage (I-V), measurements for the different mass ratios of GO:P3HT:PCBM (0:1:1(S1), 0.5:1:1(S2) and 2:1:1(S3)) used diodes allowed the determination of key electrical parameters, including ideality factor (n), barrier height (ΦB), series resistance (Rs), shunt resistance (Rsh), interface states density (Nss) and optical sensing behaviors in dark and different illumination levels (10, 30, 60, 80 and 100 mW/cm2). The rectification ratio (RR) was found to be in the order of 104. The trends obtained for the n, ΦB, Rs/Rsh and Nss show that these are influenced by the contribution of the GO. Observed increasing behavior of reverse current with increasing illumination shows that this SBDs can be use as photo-diodes/sensors/detectors. On the other hand, it was observed that the linear dynamic range (LDR), which is important parameter for image sensors, increased (6.86, 16.95 and 26.98 for S1, S2 and S3, respectively) with increasing GO contribution. In addition, to investigate and compare in more detail, capacitance-voltage (C-V) and conductance-voltage (G-V) measurements used for the determination of diffusion potential (VD), concentration of dopant acceptor atoms (NA), Fermi energy level (EF), depletion layer width (WD) for low frequency (1kHz) and high frequency (1MHz). The measured capacitance values showed a high value at the low frequency in comparison with the high frequency. This behavior explained on the basis of Nss. The findings suggest that the prepared diodes has the potential to serve as a photo-diodes/sensors/detectors for optical sensing applications.

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Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

Cited by 21 publications

References 49 publications

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

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Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

Cited by 21 publications

References 49 publications

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications

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Product

Resources

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)