Effect of substrate temperature on the growth of ITO thin films

Nisha, M. S.; Anusha, S.; Antony, Aldrin; Manoj, Reema; Jayaraj, M. K.

doi:10.1016/j.apsusc.2005.02.115

Cited by 131 publications

(83 citation statements)

References 19 publications

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“…In the majority of reports, O 2 is used as a reactive gas during growth and/or post-growth annealing to decrease the resistivity of the films [11,19,22]. Nevertheless, oxygen usage during growth and/or post-growth annealing complicates the process and puts an extra strain in vacuum chambers.…”

Section: Introductionmentioning

confidence: 99%

“…Various growth conditions have the effect 3 Author to whom any correspondence should be addressed. of increment in the carrier concentrations contributing to the enlargement of the bandgap, which is known as the BursteinMoss shift [2,11]. In addition to the carrier concentration, growth conditions strongly affect the crystallinity, impurity levels and surface roughness of the grown films.…”

Section: Introductionmentioning

confidence: 99%

“…Among the TCO thin films, indium oxide doped with tin (ITO) is widely used due to its unique electrical and optical properties such as good conductivity (about 10 4 −1 cm −1 ) and high transmittance (∼85%) in the visible region due to its large bandgap of about 3.70 eV. As-grown ITO thin films are usually highly degenerate n-type semiconductors due to their large number of oxygen vacancies as well as substitutional Sn dopants [11][12][13]. Various growth conditions have the effect 3 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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High quality ITO thin films grown by dc and RF sputtering without oxygen

Tuna

Selamet

Aygün

et al. 2010

J. Phys. D: Appl. Phys.

273

131

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High quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 • C, crystallization in the (2 2 2) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 • C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 × 10 −4 cm and 1.29 × 10 −4 cm, respectively, were obtained.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High quality ITO thin films grown by dc and RF sputtering without oxygen

Tuna

Selamet

Aygün

et al. 2010

J. Phys. D: Appl. Phys.

273

131

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“…7 The electrical, optical, infrared reflectance, hardness and chemical stability material properties of ITO are well characterized. [8][9][10] ITO can be fabricated by DC and RF magnetron sputtering, 1,5 electron beam evaporation, 9 thermal evaporation, 11 spray pyrolysis, 12 chemical solution deposition, 13 and the sol gel method. 14 Among the various methods, magnetron sputtering is most often used by industry to fabricate commercial optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

et al. 2015

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Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.

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“…UV shielding effect of the ITO coating is attributed to its chemical structure of the material. 11 The transmittance of AZO-coated nonwoven is also affected by the coating thickness, as presented in Figure 5. The average transmittance of the AZOcoated samples is also over 50% in the wavelength range between 450 and 600 nm, displaying the transparency of the AZO coatings.…”

Section: Optical Propertiesmentioning

confidence: 96%

Comparative studies of polypropylene nonwoven sputtered with ITO and AZO

Wei

Shao

Deng

et al. 2009

J of Applied Polymer Sci

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In this study, the polypropylene (PP) spunbonded nonwoven materials were used as substrates for depositing transparent nanostructures on the fiber surfaces. Magnetron sputter coating technique was used to deposit tin-doped indium oxide (ITO) and aluminumdoped zinc oxide (AZO) films onto the nonwoven substrates. The structures and properties of the deposited ITO and AZO films were investigated and compared using atomic force microscopy, energy-dispersive X-ray (EDX), and electrical and optical tests. The observations by atomic force microscopy revealed the formation of functional nanostructures on the fiber surfaces. EDX analyses confirmed the deposition of ITO and AZO functional films on the PP fibers. It was found that ITO had more compact structures on the fiber surface than AZO under the same sputtering conditions. The transmittance analysis revealed that the nonwoven substrates deposited with nanostructural AZO showed better ultraviolet shielding effect than those coated with ITO in the same thickness. The nonwoven materials coated with ITO had lower electrical resistance than those coated with AZO in the same thickness.

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Effect of substrate temperature on the growth of ITO thin films

Cited by 131 publications

References 19 publications

High quality ITO thin films grown by dc and RF sputtering without oxygen

High quality ITO thin films grown by dc and RF sputtering without oxygen

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Comparative studies of polypropylene nonwoven sputtered with ITO and AZO

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