Effect of single Al2O3 cycle insertion with various positions in SnO2 thin films using atomic layer deposition

Park, Hyun-Woo; Choi, Hyun-Woong; Lee, Namgue; Jung, Chanwon; Choi, Yeonsik; Song, Seokhwi; Choi, Yeongtae; Kim, Keunsik; Kim, Jong-Woo; Lee, Junghoon; Jeon, Hyeongtag

doi:10.1016/j.ceramint.2020.02.047

Cited by 12 publications

(19 citation statements)

References 31 publications

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“…The atomic layer deposition (ALD) has become a proper candidate to improve the above-mentioned hindrances due to high volatility of precursors, lower process temperature, and pinhole-free deposition at atomic scale. Therefore, the ALD has been widely harnessed in the innovative optoelectronics devices, such as sensors [ 16 ], batteries [ 17 ], transistors [ 18 ], solar cells [ 19 , 20 ], light-emitting diode [ 20 ], and flexible electronic devices [ 21 ]. At the same time, plasma-enhanced ALD (PEALD) not only enhances the coverage of layer-by-layer at the atomic scale in ALD, but facilitates the production of uniform, dense, and conformal films.…”

Section: Introductionmentioning

confidence: 99%

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

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Section: Introductionmentioning

confidence: 99%

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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“…Thus, a gradient of the Sn concentration is observed in SnO 2 /ZnO bilayers after processing [49] . Furthermore, a high interface roughness can be detrimental for the performance, which is a frequent problem in solution deposition [29] . In the herein presented work however, HRTEM indicates a clear layer structure and no obvious mixing is observed.…”

Section: Resultsmentioning

confidence: 58%

“…Analogies to other systems, in which In 2 O 3 is incorporated, such as In 2 O 3 /ZnO [3,15] and ZTO/In 2 O 3 [47] are evident, though. For further discussion it should also be mentioned that the addition of Al 2 O 3 with near monolayer thickness is essentially required in order to achieve a semiconducting stack at all [29] . In contrast, individual In 2 O 3 , SnO 2 layers, as well as binary In 2 O 3 /SnO 2 films deposited by the employed ALD procedure exhibit conductive behavior.…”

Section: Resultsmentioning

confidence: 99%

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Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Büschges

Hoffmann

Regoutz

et al. 2021

Chemistry A European J

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Multilayered heterostructures comprising of In2O3, SnO2, and Al2O3 were studied for their application in thin‐film transistors (TFT). The compositional influence of tin oxide on the properties of the thin‐film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post‐deposition annealing at 400 °C the thin‐films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2O3/SnO2/Al2O3 are incorporated into TFT devices, exhibiting a saturation field‐effect mobility (μsat) of 2.0 cm2 ⋅ V−1 s−1, a threshold‐voltage (Vth) of 8.6 V, a high current on/off ratio (IOn/IOff) of 1.0×107, and a subthreshold swing (SS) of 485 mV ⋅ dec−1. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).

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“…However, the high N e (≥10 18 cm −3 ) in SnO 2 due to facile formation of V O frequently causes a weak drain current modulation capability in the resulting TFTs. Most studies of ALD‐derived SnO 2 TFTs have focused on effective suppression of the high N e 52–54 . Mai et al 53 investigated the electrical characteristics of TFTs with different SnO 2 channel thicknesses at 60°C using Sn (DMP) 4 and O 2 plasma as a precursor and reactant, respectively.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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Effect of single Al2O3 cycle insertion with various positions in SnO2 thin films using atomic layer deposition

Cited by 12 publications

References 31 publications

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

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