In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.
In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.
The effect of conventional Perovskite solar cells (PSCs) by using different concentration and spin-coating speeds of titanium dioxide (TiO2) as an electron transport layer (ETL) was studied. The influence of TiO2 based on device structure: fluorine-doped tin oxide substrate/TiO2/Perovskite (CH3NH3PbI3)/2,2′,7,7′-Tetrakis[N,N-di(4-methoxyp phenyl)amino]-9,9′-spirobifluorene/silver, is also studied. The spin-coating speed is varied in a range from 1000 to 3000 rpm to get optimal performance of device. The optimized power conversion efficiency (PCE) of PSCs with original concentration (OC) and double concentration (DC) TiO2 is 8.74 and 9.93%, respectively. The reason is attributed to excellent absorption in shorter wavelength, compact characteristic, and suitable thickness of TiO2, leading to perfect short-circuit current density (Jsc), lower series resistance (Rs), and higher fill factor (FF) of 0.75. Besides, recombination of electron and hole is also decreased due to the compact feature, leading to higher open-circuit voltage (VOC) of 0.91 V.
In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.