Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Zhang, Yamin; Feng, Shiwei; Zhu, Hongtu; Guo, Chunsheng; Deng, Bing; Zhang, Guangchen

doi:10.1109/led.2014.2300856

Cited by 34 publications

(15 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We observe an increase of bulk charge trapping with respect to the drain voltage, V and V GS1 = 0 V to -3 V; revealing the dependence of t DG2 on both drain and gate voltages. (b) Transient heating characteristics at various power densities (P ) using the RC thermal model [10], [25]. Note that t sat,th is temperature independent.…”

Section: A Fast Current Degradation -Dg1mentioning

confidence: 99%

“…Several studies investigating the current degradation in AlGaN/GaN HEMTs resulted in different conclusions [6], [9], [10]. Some studies of transient drain current suggest that the current degradation, at different time constants, are caused by both bulk and surface charge trapping [6], [9].…”

Section: Introductionmentioning

confidence: 99%

“…Some studies of transient drain current suggest that the current degradation, at different time constants, are caused by both bulk and surface charge trapping [6], [9]. Other investigations suggest that the current degradation trends are proportional to self-heating effects that occur at different times [10]. However, a recent wide agreement is that the transient current degradation involves both device charge trapping and self-heating [11]- [14] at different times.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I S ) and drain (I D ) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I S and I D , a bulk charge trapping time constant is found to be independent of both drain (V DS ) and gate (V GS ) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.

show abstract

Section: A Fast Current Degradation -Dg1mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…A current transient is affected by two major factors: self-heating and trapping effects [15][16][17][18]. Previous studies [16][17][18] have shown that the drain current declines as the temperature increases because of a high power density.…”

Section: Current Transientmentioning

confidence: 99%

“…Previous studies [16][17][18] have shown that the drain current declines as the temperature increases because of a high power density. Also, trapping behaviors cause a decline in the current by capturing electrons whereas detrapping behaviors cause an increase in drain current by releasing electrons [15].…”

Section: Current Transientmentioning

confidence: 99%

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Zheng

Zhang

Yang

2016

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Alim

Naima

Rezazadeh

2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, the temperature dependence of direct current (DC) and scattering parameters of GaAs pseudomorphic high‐electron‐mobility transistors (pHEMTs) before and after back‐end‐of‐line process (multilayer technology) by evaluating corresponding equivalent‐circuit models is reported on. The change of the relative sensitivity of the microwave performance with ambient temperature is evaluated using scattering parameter measurements and the corresponding equivalent‐circuit models. The devices studied are two pHEMTs with the same 200 μm gate width but manufactured using pre‐ and post‐multilayer technology. The investigation is conducted under both cooled and heated conditions, through temperature variations from −25 to 125 °C. Although the thermal impact highly depends on the selected operating condition, the bias point is chosen to allow for a fair comparison between the transistor fabricated before and after multilayer technologies to the maximum. Similar patterns of thermal sensitivities are observed for the pre and post multilayer‐manufactured devices but in the case of the multilayer device, the temperature effect is more pronounced.

show abstract

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Cited by 34 publications

References 16 publications

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Contact Info

Product

Resources

About