Abstract:Herein, the temperature dependence of direct current (DC) and scattering parameters of GaAs pseudomorphic high‐electron‐mobility transistors (pHEMTs) before and after back‐end‐of‐line process (multilayer technology) by evaluating corresponding equivalent‐circuit models is reported on. The change of the relative sensitivity of the microwave performance with ambient temperature is evaluated using scattering parameter measurements and the corresponding equivalent‐circuit models. The devices studied are two pHEMTs… Show more
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