Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient

Optical and electrical properties of negatively charged aluminium oxynitride films

“…2. This flatband voltage is higher than our previously reported paper [14]. Table 2 shows the flatband voltage and the negative charge density obtained by different groups and our previous work.…”

“…In this paper, we show the best experimental results of aluminium oxynitride (AlON) films than our previous oxidized AlN films [14] and other group results such as AlF films [10] of an MIS structure with a high density of fixed negative interface charges.…”

“…Such conventional films have been mostly reported to have fixed a positive charge. AlN films are characterized by a high density of fixed negative charges at the interface which can be used for field induced surface passivation that creates very effective back surface field (BSF) layer at the silicon interface [14].…”

Realization of p-type conduction in (ZnO)1−x(AlN)x thin films grown by RF magnetron sputtering

“…5 shows the FTIR spectra of (ZnO) 1−x (AlN) x films. All the (ZnO) 1−x (AlN) x films show the absorption peak at around 613 cm −1 which corresponds to Al-O bonds as assigned by Jang et al [26]. The absorption peak of Al-O bond is intensive for 4 mol% (ZnO) 1−x (AlN) x film than rest of the ANZO films of lower concentration indicating the high density of Al-O bonds in the film.…”

Role of charge particles irradiation on the deposition of AlN films using plasma focus device

“…In the present work, the width of the absorption peak ranges from 550 to 900 cm À 1 . It is known that absorption peak centred at $ 613 cm À 1 is associated with Al-O bond [42]. This shows that there may be an overlapping between two peaks resulting in the formation of solid solution containing Al, N and O elements.…”