2009
DOI: 10.1016/j.jallcom.2008.12.010
|View full text |Cite
|
Sign up to set email alerts
|

Realization of p-type conduction in (ZnO)1−x(AlN)x thin films grown by RF magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
8
0

Year Published

2010
2010
2016
2016

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 13 publications
(8 citation statements)
references
References 30 publications
0
8
0
Order By: Relevance
“…[12][13][14]. Among the various candidate materials for realizing high conductivity p-type of ZnO, Sb incorporated ZnO is of current interest because Sb would substitute for Zn instead of oxygen and then produce two corresponding Zn vacancies suggested by Limpijumnong et al [15].…”
Section: Introductionmentioning
confidence: 99%
“…[12][13][14]. Among the various candidate materials for realizing high conductivity p-type of ZnO, Sb incorporated ZnO is of current interest because Sb would substitute for Zn instead of oxygen and then produce two corresponding Zn vacancies suggested by Limpijumnong et al [15].…”
Section: Introductionmentioning
confidence: 99%
“…Then they proposed a codoping method, which use simultaneously nitrogen acceptors and reactive III-group donors as dopants complex such as Ga–N, In–N, and Al–N, to increase the solubility of N atoms in the ZnO films and lower the acceptor level in the band gap due to strong interaction between N acceptors and reactive donor codopants. In recent years, p -type ZnO films were comprehensively achieved by using the codoping method [ 35 , 112 , 113 , 114 , 115 , 116 , 117 , 118 , 119 ]. Compared with Ga and In atoms, Al is more suitable as reactive donors for their superior advantages such as low cost and near containment-free material as well as the superior stability for the strong Al–N and Al–O bonds.…”
Section: P-type Dopingmentioning
confidence: 99%
“…In conventional codoping to fabricate p-ZnO, Al (Al 2 O 3 ) and N (N 2 /NO/NH 3 /N 2 O/NO 2 ) sources have been used separately which is quite complicate due to several drawbacks like toxicity and need to crack N 2 O & N 2 into N. Recently, we have proposed a novel idea that direct doping (codoping) of AlN into ZnO without any precursors and achieved p-ZnO for 0.5 and 1 mol% AlN [4]. For the present work, we have chosen 1 mol% AlN doped ZnO as p-type film for the fabrication of p-n junction as it has been found as best codoped film [4].…”
Section: Introductionmentioning
confidence: 99%
“…For the present work, we have chosen 1 mol% AlN doped ZnO as p-type film for the fabrication of p-n junction as it has been found as best codoped film [4]. For n-type film, we have used undoped ZnO.…”
Section: Introductionmentioning
confidence: 99%