2020
DOI: 10.1016/j.surfcoat.2020.125773
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Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films

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Cited by 31 publications
(20 citation statements)
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“…In [30], however, the effect of the energy-enhanced ion bombardment was observed during growth of a 1 μm thick (Al, Cr) 2 O 3 insulating film on a conducting and grounded substrate, while no effect was observed for deposition on a 0.5 mm thick insulating sapphire substrate. In all the three works [28][29][30], the floating potential at the substrate position U fl during the positive pulse reached the value close to the applied positive voltage, i.e. U fl ≈ U + .…”
Section: Introductionmentioning
confidence: 91%
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“…In [30], however, the effect of the energy-enhanced ion bombardment was observed during growth of a 1 μm thick (Al, Cr) 2 O 3 insulating film on a conducting and grounded substrate, while no effect was observed for deposition on a 0.5 mm thick insulating sapphire substrate. In all the three works [28][29][30], the floating potential at the substrate position U fl during the positive pulse reached the value close to the applied positive voltage, i.e. U fl ≈ U + .…”
Section: Introductionmentioning
confidence: 91%
“…The effects resulting from the energy-enhanced ion bombardment during bipolar HiPIMS have so far been reported for deposition of Cu [18,24], Ti [12], TiN [14], DLC [17,25,26] and CrAlN films [27]. In addition, a study of the effect of U + on the properties of CrN films with grounded and floating substrates was carried out by Batková et al [28]. A clear effect of the energy-enhanced ion bombardment was observed only in the case of a grounded substrate for U + ∈ [0, 400] V, while for a floating substrate no evidence of energetic ion bombardment was seen.…”
Section: Introductionmentioning
confidence: 99%
“…In view of these outstanding characteristics, HiPIMS brings opportunities to improve ion bombardment energy on the growing films and in this way to optimize the films structures and properties. To enable the development and optimization of controlling ion energy in HiPIMS, in the last two years, a novel approach by applying a reverse positive pulse right after the main negative HiP-IMS pulse is widely studied, generally named as BP-HiPIMS discharge [12][13][14][15][16][17][18][19]. In fact, the asymmetrically bipolar-pulse discharge mode has been used in the traditional midfrequency magnetron discharge and DCMS discharge to reduce 'target poisoning', which also has an advantage of accelerating ions for deposition [20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…One of our most recent works shows that bipolar-HiPIMS enables an energy-enhanced deposition process of high-quality (high hardness, low coefficient of friction, good wear resistance, good adhesion to the substrate, very low surface roughness, and defect free) hydrogen-free DLC thin films on electrically insulated substrates, without using any substrate bias voltage, adhesion interfacial layer or substrate pre-treatment [23]. However, other studies have shown that, apart from reduced arc-generation probability and enhanced discharge stability, there were no net benefits in the case of bipolar-HiPIMS deposition of non-conductive materials [24] or deposition onto nonconductive or floating substrates [25]. The apparently contradictory results, in terms of the effect of positive target voltage on the film's properties, reported in the literature, could be due to some different deposition conditions and/or deposition systems used (e.g., different pulsing and/or magnetic field configurations).…”
Section: Introductionmentioning
confidence: 99%