Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition

Hsu, Chia-Hsun; Zhang, Zhi-Xuan; Huang, Pao-Hsun; Wu, Wan-Yu; Ou, Sin-Liang; Lien, Shui−Yang; Huang, Chien-Jung; Lee, Ming‐Kwei; Zhu, Wen‐Zhang

doi:10.1016/j.ceramint.2020.11.232

Cited by 12 publications

(6 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The CLP number also increased as the power increased; however, at a power higher than 60 W a clear break of CLP was observed, possibly due to the degradation of MAPbI 3 induced by the excess oxygen ions, resulting in the swelling and destruction of the film surface associated with CO X [ 30 , 35 ]. These results are similar to those of some studies in surface or interfacial engineering via plasma treatment within chemical vapor disposition and atomic layer deposition [ 36 ]. Notably, the influence of oxygen ion bombardment gradually increased with increased power.…”

Section: Resultssupporting

confidence: 91%

Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere

et al. 2021

Self Cite

View full text Add to dashboard Cite

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI3) quantum dots (QDs) into methylammonium lead iodide (MAPbI3). CsPbI3 QDs and MAPbI3 were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI3.

show abstract

Section: Resultssupporting

confidence: 91%

Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…The deposited rate is gained by the trade-off between the plasma bombardment etching effect and the full oxidation. It is interesting to note that this variation is also found in the deposition of tin oxide prepared by the same ALD system in our lab [26]. Figure 4a shows the measured wavelength-dependent refractive index spectra for the RP-ALD SiO 2 films with various plasma powers.…”

Section: Resultssupporting

confidence: 56%

Section: Resultsmentioning

confidence: 61%

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

et al. 2021

Self Cite

View full text Add to dashboard Cite

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

show abstract

“…The ALD timing could be expressed as t 1– t 2– t 3– t 4, where t 1 is the first precursor's exposure time, t 2 is the purge time after the first exposure, t 3 is the exposure time of the second precursor, and t 4 is the purge time of the second precursor. Our previous research indicated that the timing for In 2 O 3 was 2–6–16–5 s and that for SnO 2 was 1.6–6–11–5 s. 23,24 Furthermore, In 2 O 3 could be deposited between 225 and 275 °C and SnO 2 could be deposited between 250 and 300 °C. In the present work, a substrate temperature of 250 °C was chosen to prepare ITO films since the ALD temperature windows of the component materials must overlap.…”

Section: Methodsmentioning

confidence: 96%

“…In our previous works, the properties of In 2 O 3 and SnO 2 films prepared using PEALD with InCp/O 2 plasma and TDMASn/O 2 plasma, respectively, have been studied individually. 23–26 In the present work, PEALD ITO films are prepared using a supercycle approach with a sequence of In 2 O 3 and SnO 2 subcycles. To our best knowledge, this is the first investigation of the ALD ITO films prepared from these precursor–oxidant combinations.…”

Section: Introductionmentioning

confidence: 99%

Single-crystalline-like indium tin oxide thin films prepared by plasma enhanced atomic layer deposition

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition

Cited by 12 publications

References 33 publications

Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere

Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Single-crystalline-like indium tin oxide thin films prepared by plasma enhanced atomic layer deposition

Contact Info

Product

Resources

About