Effect of phosphorus doping on the structural properties in nc-Si:H thin films

Gullanar, M.H.; Zhang, Y.H.; Chen, H.; Wei, Wensheng; Xu, Guo‐Bo; Wang, T.M.; Cui, Rongqiang; Shen, Wei

doi:10.1016/s0022-0248(03)01371-x

Cited by 12 publications

(3 citation statements)

References 18 publications

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“…The average size of nc-Si is about 5.8 nm calculated by the phonon confinement model [ 18 ]. It is found that X c increases with the doping concentration when the doping level is low, which indicates that P dopants can promote the crystallization process of Si [ 19 ]. This is because P dopants tend to first passivate the Si dangling bonds which helps increase the order of the film and then locate at the substitutional sites inside the Si nanocrystals as P 4 0 which can lower the formation energy of Si nanocrystals [ 15 , 20 ].…”

Section: Resultsmentioning

confidence: 99%

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

Qian

Shan

et al. 2016

Nanoscale Res Lett

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High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.

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Section: Resultsmentioning

confidence: 99%

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

Qian

Shan

et al. 2016

Nanoscale Res Lett

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“…The effect of P doping on the structures of nc-Si films was also discussed previously. 24 It was reported that with increasing the P doping concentrations, the grain size of formed nc-Si is increased and the nc-Si film becomes more ordered which may be related to the reduced strain in the films. However, the further work is need to exactly understand the enhanced crystallinity due to the P doping.…”

Section: Methodsmentioning

confidence: 99%

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

Shan

Qian

et al. 2016

AIP Advances

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High conductive phosphorus-doped nano-crystalline Si embedded in Silicon-Carbide (SiC) host matrix (nc-Si:SiC) films were obtained by thermally annealing doped amorphous Si-rich SiC materials. It was found that the room conductivity is increased significantly accompanying with the increase of doping concentrations as well as the enhanced crystallizations. The conductivity can be as high as 630 S/cm for samples with the optical band gap around 2.7 eV, while the carrier mobility is about 17.9 cm2/ V·s. Temperature-dependent conductivity and mobility measurements were performed which suggested that the carrier transport process is strongly affected by both the grain boundaries and the doping concentrations.

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“…At the same time, it can be noticed that the intensity of (111), (220) and (311) diffraction peak was slightly increased for the annealed films. From the observed XRD results the average grain size d of the as-deposited and annealed films was estimated using the following Debye-Scherrer formula [4,17]:…”

Section: Piezoresistive Property Evaluationmentioning

confidence: 99%

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

Pan

Ding

Cheng

2015

J Mater Sci: Mater Electron

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Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition technique. Annealing treatment was performed on the deposited films at 400°C for 60 min in nitrogen atmosphere. Microstructure of the as-deposited and annealed films was characterized by X-ray diffraction (XRD) and Raman scatter spectra, surface morphology of these films was analyzed with atomic force microscopy (AFM), and piezoresistive properties of these films were evaluated by a four-point bending-based measurement system. The influence of annealing treatment on microstructure and piezoresistive properties of borondoped nc-Si:H thin films was comparatively studied. The Raman scatter spectra and XRD results together with AFM analysis results revealed that annealing treatment can increase the average grain size and crystalline volume fraction of boron-doped nc-Si:H thin films, and can alter grains distribution and concentration of the films. The piezoresistive property evaluation results showed that annealing treatment can increase the gauge factor of boron-doped ncSi:H thin films from 29.9 to 42.3. These results indicated that annealing treatment can act as an effective way to improve piezoresistive sensitivity of boron-doped nc-Si:H thin films. In this paper, the correlation between borondoped nc-Si:H thin films' piezoresistive properties and microstructure changes induced by annealing was discussed in detail.

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Effect of phosphorus doping on the structural properties in nc-Si:H thin films

Cited by 12 publications

References 18 publications

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

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