Effect of Nitrogen Incorporation to $\hbox{AgInSbTe-SiO}_{2}$ Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memory

Chiang, Kuo-Chang; Hsieh, Tsung−Eong

doi:10.1109/tmag.2011.2108642

Cited by 4 publications

(3 citation statements)

References 28 publications

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“…These indicate that the nitrogen incorporation during the reactive sputtering cannot effectively suppress the generation of interface states near/at the CSL/SiO 2 and SiO 2 /Si interfaces during the P/E stress. However, this problem can be solved since the defects and undesired states in the dielectric and at the CSL/SiO 2 interface can be eliminated by the NH 3 annealing, 18 and thus their qualities are improved due to reduction of Gd silicates, and some nitrogen is incorporated at/near the SiO 2 /Si interface, which produce stronger chemical bonds.…”

Section: -mentioning

confidence: 99%

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Liu

Jiang

et al. 2012

Applied Physics Letters

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Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

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Section: -mentioning

confidence: 99%

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Liu

Jiang

et al. 2012

Applied Physics Letters

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“…Such a nanocomposite layer can be prepared by a one-step sputtering process which has been demonstrated previously [8,9]. In this work, the MOS sensor device containing AIST-SiO 2 nanocomposite as the active layer is prepared and its feasibility to H 2 gas sensor is evaluated.…”

Section: Introductionmentioning

confidence: 99%

Characterization of AgInSbTe-SiO₂ Nanocomposite Thin Film for Hydrogen Gas Sensor Applications

2011

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Hydrogen (H 2 ) sensing property of AgInSbTe (AIST)-SiO 2 nanocomposite thin film prepared by target-attachment sputtering method was investigated in this work. The sample subjected to a 400°C-annealing for 90 sec exhibits a significant sensitivity (58.9 %) and short response time (75 sec) upon the exposure to an ambient containing 200 ppm H 2 at 75°C. The gas sensing capability is ascribed to the presence of antimony oxides, e.g., Sb 2 O 3 and Sb 2 O 5 , in nanocomposite layer which provide the charge carriers for sensing reactions. Moreover, the high specific-surface-area (SSA) feature of AIST nanocrystals in nanocomoposite layer provided numerous sites for reduction/oxidation reactions and thus a good H 2 gas sensing property can be achieved.

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“…In this work, nanocomposite thin film comprised of AgInSbTe (AIST) chalcogenide NCs embedded in SiO 2 matrix was adopted as the charge trapping layer due to its ultra fast phase-change rate and comparatively low recrystallization temperature [10]. Our previous study has demonstrated the NFGM device containing a sole AIST nanocomposite layer may have a good memory performance with ΔV FB shift ≈ 6.9V at ±8V gate voltage sweep [11]. In this work, HfO 2 or HfO 2 /SiO 2 blocking oxide layer was incorporated in the devices and the enhancement of NFGM characteristics is presented as follows.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO₂ Nanocomposite by Inserting HfO₂/SiO₂ Blocking Oxide Layer

Chiang

Hsieh

2011

MRS Proc.

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This work presents an enhancement of nonvolatile floating gate memory (NFGM) devices comprised of AgInSbTe (AIST) nanocomposite as the charge-storage trap layer and HfO 2 or HfO 2 /SiO 2 as the blocking oxide layer. A significantly large memory window (ΔV FB) shift = 30.7 V and storage charge density = 2.3×10 13 cm −2 at ±23V gate voltage sweep were achieved in HfO 2 /SiO 2 /AIST sample. Retention time analysis observed a ΔV FB shift about 19.3 V and the charge loss about 13.4% in such a sample under the ±15V gate voltage stress after 10 4 sec retention time test. Regardless of applied bias direction, the sample containing HfO 2 /SiO 2 layer exhibited the leakage current density as low as 150 nA/cm 2 as revealed by the current-voltage (I-V) measurement. This effectively suppresses the electron injection between gate electrode and charge trapping layer and leads to a substantial enhancement of NFGM characteristics.

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Effect of Nitrogen Incorporation to $\hbox{AgInSbTe-SiO}_{2}$ Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memory

Cited by 4 publications

References 28 publications

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Characterization of AgInSbTe-SiO₂ Nanocomposite Thin Film for Hydrogen Gas Sensor Applications

Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO₂ Nanocomposite by Inserting HfO₂/SiO₂ Blocking Oxide Layer

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Effect of Nitrogen Incorporation to $\hbox{AgInSbTe-SiO}_{2}$ Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memory

Cited by 4 publications

References 28 publications

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Characterization of AgInSbTe-SiO2 Nanocomposite Thin Film for Hydrogen Gas Sensor Applications

Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite by Inserting HfO2/SiO2 Blocking Oxide Layer

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Product

Resources

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Characterization of AgInSbTe-SiO₂ Nanocomposite Thin Film for Hydrogen Gas Sensor Applications

Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO₂ Nanocomposite by Inserting HfO₂/SiO₂ Blocking Oxide Layer