Abstract:This work presents an enhancement of nonvolatile floating gate memory (NFGM) devices comprised of AgInSbTe (AIST) nanocomposite as the charge-storage trap layer and HfO 2 or HfO 2 /SiO 2 as the blocking oxide layer. A significantly large memory window (ΔV FB) shift = 30.7 V and storage charge density = 2.3×10 13 cm −2 at ±23V gate voltage sweep were achieved in HfO 2 /SiO 2 /AIST sample. Retention time analysis observed a ΔV FB shift about 19.3 V and the charge loss about 13.4% in such a sample under the ±15V … Show more
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