No abstract

No abstract

No abstract

No abstract

In this study, we reported a smart temperature‐sensitive drug release system based on titanium nanotubes. Titanium nanotubes were fabricated with an electrochemical approach. The 3‐trimethoxysilyl propylmethacrylate (MPS) was initially coupling to the surfaces of titanium nanotubes, and then polymerizing with N‐isopropylacrylamide (NIPAAm) and acrylamide (AAm) to form a hydrogel covering layer. Scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize the titanium nanotubes drug delivery systems. SEM images revealed that titanium nanotubes had relatively uniform distribution in diameters (52 ± 9 nm) and around 410 nm in length. FTIR spectra suggested that MPS was immobilized and in turn triggering the formation of PNIPAAm/PAAm network onto the surfaces of titanium nanotubes. Drug release profiles indicated that a temperature‐responsive controlled drug release system based on titanium nanotubes was achieved. This study provides alternative for developing novel implantable controlled drug delivery systems from titanium nanotubes.

No abstract

A TiON/HfON dual charge storage layer (CSL) with tapered bandgap structure is proposed for metal-oxide-nitride-oxide-silicon-type memory by using the inter-diffusion of Ti and Hf atoms near the TiON/HfON interface to form an intermixing layer of Hf x Ti y ON with varying Hf/Ti ratio in the dual CSL during post-deposition annealing, as confirmed by transmission electron microscopy. The memory capacitor with TiON/HfON as dual-CSL shows a large memory window of 5.0 V at 612 V for 100 ls, improved cycling endurance with little degradation after 10 5 cycles and good data retention with an extrapolated 10-yr window of 4.6 V at room temperature. These are highly associated with the tapered bandgap structure and appropriate trap distribution in the dual CSL. Therefore, the TiON/HfON dual-CSL structure provides a very promising solution for future charge-trapping memory applications. V

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.