Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

Abstract

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory

“…The extrapolation of the experimental results shows that the charge losses after ten years were 41.2%, 18% and 12.8%, respectively, suggesting that the NH 3 and N 2 annealing treatment could reduce the charge loss. The Z3 sample obtained optimum retention performance, which could be ascribed to the generation of deep level bulk charge traps, and reduced shallow level and interfacial traps in CTL [12]. These deep level traps are more immune to tunneling of electrons back to the substrate.…”

Performance improvement of charge‐trap memory by using a stacked Zr0.46Si0.54O2/Al2O3 charge‐trapping layer

“…Aiming to overcome the bottleneck, a vast amount of research work has been performed to improve the memory characteristics. Using high‐ k dielectrics as storage media to supersede conventional nitride charge‐trapping layer is a feasible solutions, due to the merits of radically enhancing the retention, weakening the coupling effect and leakage current , and high trap density . Additionally, increasing traps density of the charge‐trapping layer and modulating the energy‐band structure seem to be effective approaches to improve the charge‐trapping capability.…”

Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si

“…In a recent investigation N incorporation using NH 3 has been demonstrated to render amorphous Gd 2 O 3 as a charge storage layer owing to the large quantity of electron traps generated by N [20]. However, profound effect of hydrogen on trap generation in the oxide layers cannot be ruled out when NH 3 is used as a nitridation agent [21].…”