Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

Photosensitive n-Zn0.5Cd0.5O/p-InSe Heterostructures Prepared by Magnetron Sputtering

“…The substrates are obtained by simple mechanical exfoliation, which results in atomically smooth surfaces that do not require further mechanical or chemical treatment. Employment of InSe as a substrate material enables fabrication of photosensitive structures of different types: Schottky diodes [1,2], homojunctions [3,4], and heterojunctions [5][6][7].…”

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

“…These lamellae can be used as base elements in heterojunctions with optical contact, structures of semiconductor‐own oxide type and metal‐semiconductor contact . Both, the specifics of chemical bonds between the atoms of B‐A‐A‐B layered packings, and low density of surface states (≈10 10 cm −2 ), define the obtaining methods of 2D structures for nano‐lamellar electronic devices, ultrathin layer transistors, etc. The thermal annealing (TA) of gallium and indium monochalcogenides in normal atmosphere, or in oxygen‐enriched atmosphere, leads to the formation of their crystalline micro and nanocomposites with In 2 O 3 and Ga 2 O 3 oxides .…”

Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions

“…Zinc oxide (ZnO) and indium monoselenide (InSe) layered crystals are the semiconductors which are of great interest from the point of view of heterojunction fabrication [1][2][3][4]. With a band gap of 1.25 eV, InSe is a promising material for the solar cell technology [5][6][7][8][9].…”