Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD

Hong, Chan Hwa; Shin, Jang-Uk; Park, Nae Man; Kim, Kyung Hyun; Kim, Bo Sul; Song, Chang Woo; Woong, Yang， Ji; Seo, Woo Hyung; Ju, Byeong Kwon; Cheong, Woo‐Seok

doi:10.1166/jnn.2015.11289

Cited by 2 publications

(3 citation statements)

References 18 publications

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“…[ 28 ] Generally, titanium cation is an attractive carrier suppressor for use in metal oxide semiconductors, due to the fact that titanium element possesses comparable electronegativity with Hf, Zr, and Sc. [ 29,30 ] Due to the many advantages of transition group metal‐titanium, it has become one of the widely used materials in memristor. [ 31–33 ] When Ti‐doped ITO films are used as an electrode, the memristor have the characteristics of the ITO electrode such as self‐compliance current.…”

Section: Introductionmentioning

confidence: 99%

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Xia

Qin

Qiu

2022

Adv Elect Materials

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It is necessary to develop new device to realize the simultaneous storage and compute in one device to overcome von Neumann bottleneck. [2][3][4] Among the various types of NVMs, memristors, as an emerging and promising memory storage device, have attracted widespread attention due to their low cost, high density, long-term data retention, fast operating speed, high endurance, and simple structure. [5,6] It suggests promising applications for information storage and calculation, including as embedded memory in Internet of Things (IoT) and in neuromorphic computing. Oxide-based memristors are being extensively studied as one of the most promising technologies for next-generation non-volatile memory and neuromorphic computing. [7,8] BiFeO 3 (BFO) is an important multiferroic material and attracts extensive attention for its superior performance in resistive characteristics, such as large storage window. [9,10] Nevertheless, most of BFO-based devices with conductive filaments (CFs) formation and rupture have unstable switching processes, correspondingly leading to large cycle-to-cycle variations in resistive switching. [11][12][13][14] High-performance memristors to meet the requirements of highly uniform, large storage windows, and low-power consumption are yet to be developed.Diminution for power consumption, enhancement of uniformity, and expansion of storage window in a definitive and effective way are urgent need and critical challenges, which are also very important for low-power storage and neuromorphic computing applications. Currently, to improve the performance of the memristors, much of work are devoted to changing the novel structures, investigating resistive switching layer and electrode material. [15][16][17][18][19] Several works were reported the utilization of novel multicomponent oxides (MCOs) as RS layers and electrodes to improve memristors' performance. [20][21][22][23][24] MCOs assume a variety of composition-dependent film structures that can be controlled by the addition of a network former, a mobility enhancer, and a carrier suppressor. Among the various MCOs, the indium tin oxide (ITO) as a transparent conductive material has been widely used in the memory and sensor industries. The memristors with ITO electrodes have low operating voltage and compliance current. [25][26][27] Titanium is abundant on earth and offers the advantage of being inexpensive and nontoxicity. [28] Generally, titanium cation is an attractive carrier suppressor for use in metal oxide semiconductors, due to the fact Memristor, processing data storage, and logic operation all-in-one, is expected to create a new era of neuromorphic computing and digital logic. Here, this work demonstrates a BiFeO 3 -based memristor with Ti-doped indium tin oxide as the top electrode material, exhibiting high metrics such as a switching voltage of ≈0.15 V, coefficients of variations of low resistance state of ≈0.46% and a large on/off ratio of ≈10 3 . What is more, the device exhibits a power consumption as low as ≈1.02 µW in set process ...

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Section: Introductionmentioning

confidence: 99%

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Xia

Qin

Qiu

2022

Adv Elect Materials

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“…On the other hand, ionized physical vapor depositions (IPVDs) with inductively coupled plasma (ICP) reactors have improved the structural, electrical, and optical properties of transparent electrical materials by showing a high ionization rate and plasma density at a low temperature. 15,16 In this study, we investigated the effects of ICP on the electrical and optical properties of zinc tin oxide (ZTO)/Ag/ ZTO electrodes at room temperature. In addition, we successfully fabricated a 221 × 130 mm sized glass and filmbased single-layer TSP.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Inductively Coupled Plasma on Multilayer Electrodes for Flexible Single-Layer Touch Screen Panels

Hong

Lee

Kim

et al. 2019

ACS Appl. Mater. Interfaces

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We investigated the effect of inductively coupled plasma (ICP) on multilayer electrodes for flexible capacitive touch sensors. We found that using ICP during Ag deposition generally increased the conductivity and transmittance of multilayer electrodes. As a result, in the case of the multilayer electrode with an ICP power of 150 W during Ag deposition, 5.7 Ω/sq of sheet resistance and 89.6% of transmittance (550 nm) have been achieved. We demonstrate that the crystallization of the ICP supplied Ag layer in multilayer electrodes leads to the smooth surface roughness of the multilayer film; the smooth surface roughness provided low light scattering. As a result, the crystallized Ag thin film by ICP improved the sheet resistance and transmittance of multilayer electrodes. Finally, we fabricated a 221 × 130 mm (active layer)-sized single-layer touch screen panel (TSP) using multilayer electrodes with ICP on a corning glass and polyethylene terephthalate flexible substrate. The single-layer TSPs show high linearity and sensitivity with multitouches.

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Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD

Cited by 2 publications

References 18 publications

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Effect of Inductively Coupled Plasma on Multilayer Electrodes for Flexible Single-Layer Touch Screen Panels

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Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD

Cited by 2 publications

References 18 publications

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Effect of Inductively Coupled Plasma on Multilayer Electrodes for Flexible Single-Layer Touch Screen Panels

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Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect